SI4404DY.pdf

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Si4404DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
Power MOSFET
100% R g Tested
V DS (V)
r DS(on) (
)
I D (A)
0.0065 @ V GS = 10 V
23
30
0.008 @ V GS = 4.5 V
17
D
SO-8
S
1
8
D
S
2
3
7
D
G
S
6
D
G
4
5
D
Top View
S
Ordering Information: Si4404DY
Si4404DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T A = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V DS
30
V
Gate-Source Voltage
V GS
20
T A = 25
C
23
15
Continuous Drain Current (T J = 150
C) a
I D
T A = 70
C
19
12
A
Pulsed Drain Current (10
s Pulse Width)
I DM
60
Continuous Source Current (Diode Conduction) a
I S
2.9
1.3
T A = 25
C
3.5
1.6
Maximum Power Dissipation a
P D
W
T A = 70
C
2.2
1
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
29
35
Maximum Junction-to-Ambient a
J i tAbi a
R thJA
Steady State
67
80
C/W
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R thJF
13
16
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71247
S-31873—Rev. F, 15-Sep-03
www.vishay.com
1
TrenchFET
30
V
C) a
Continuous Drain Current (T J = 150
I D
A
Maximum Power Dissipation a
P D
W
Mi
R
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Si4404DY
Vishay Siliconix
SPECIFICATIONS (T J = 25C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = 250
A
1.0
V
Gate-Body Leakage
I GSS
V DS = 0 V, V GS =
20 V
100
nA
V DS = 30 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
A
V DS = 30 V, V GS = 0 V, T J = 55
C
5
On-State Drain Current a
I D(on)
V DS
5 V, V GS = 10 V
30
A
V GS = 10 V, I D = 23 A
0.0045
0.0065
Drain-Source On-State Resistance a
r DS(on)
0.008
V GS = 4.5 V, I D = 17 A
0.0068
Forward Transconductance a
g fs
V DS = 15 V, I D = 23 A
80
S
Diode Forward Voltage a
V SD
I S = 2.9 A, V GS = 0 V
0.8
1.2
V
Dynamic b
Total Gate Charge
Q g
36
55
Gate-Source Charge
Q gs
V DS = 15 V, V GS = 4.5 V, I D = 23 A
15
nC
Gate-Drain Charge
Q gd
12
Gate Resistance
R g
1.5
2.2
3.7
Turn-On Delay Time
t d(on)
20
30
Rise Time
t r
V DD = 15 V, R L = 15
15
23
Turn-Off Delay Time
t d(off)
I D
1 A, V GEN = 10 V, R G = 6
105
160
ns
Fall Time
t f
40
60
Source-Drain Reverse Recovery Time
t rr
I F = 2.9 A, di/dt = 100 A/
s
50
80
2%.
b. Guaranteed by design, not subject to production testing.
300
s, duty cycle
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
50
V GS = 10 thru 4 V
50
40
40
30
30
20
20
3 V
T C = 125
C
10
10
25
C
0
0
-55
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V DS - Drain-to-Source Voltage (V)
V GS - Gate-to-Source Voltage (V)
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Document Number: 71247
S-31873—Rev. F, 15-Sep-03
Zero Gate Voltage Drain Current
I DSS
A
Drain-Source On-State Resistance a
r DS(on)
V DD = 15 V, R L = 15
Notes
a. Pulse test; pulse width
323066348.009.png 323066348.010.png
Si4404DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
6000
0.008
5000
C iss
V GS = 4.5 V
4000
0.006
V GS = 10 V
3000
0.004
2000
C oss
0.002
1000
0.000
0
C rss
0
10
20
30
40
50
60
0
6
12
18
24
30
I D - Drain Current (A)
V DS - Drain-to-Source Voltage (V)
10
Gate Charge
1.8
On-Resistance vs. Junction Temperature
8
V DS = 15 V
I D = 23 A
1.6
V GS = 10 V
I D = 23 A
1.4
6
1.2
4
1.0
2
0.8
0
0.6
0
20
40
60
80
- 50 - 25
0
25
50
75
100 125 150
Q g - Total Gate Charge (nC)
T J - Junction Temperature (
C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
60
0.010
0.008
T J = 150
C
0.006
10
0.004
T J = 25
C
I D = 23 A
0.002
1
0.000
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
V GS - Gate-to-Source Voltage (V)
Document Number: 71247
S-31873—Rev. F, 15-Sep-03
www.vishay.com
3
323066348.001.png 323066348.002.png
Si4404DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
60
0.2
I D = 250
A
50
- 0.0
40
- 0.2
30
- 0.4
20
- 0.6
- 0.8
10
- 1.0
0
- 50 - 25
0
25
50
75
100 125 150
10 -2
10 -1
1
10
100
600
T J - Temperature (
C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
P DM
0.05
t 1
t 2
t 1
t 2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 67
C/W
Single Pulse
3. T JM - T A = P DM Z thJA (t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (sec)
www.vishay.com
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Document Number: 71247
S-31873—Rev. F, 15-Sep-03
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