TPC8106.pdf

TPC8106-H

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)

TPC8106−H

High Speed and High Efficiency DC−DC Converters

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

Unit: mm

Small footprint due to small and thin package

High speed switching

Small gate charge : Qg = 52 nC (typ.)

Low drain−source ON resistance : R DS (ON) = 14 mΩ (typ.)

High forward transfer admittance : |Y fs | = 16.6 S (typ.)

Low leakage current : I DSS = −10 µA (max) (V DS = −30 V)

Enhancement−mode : V th = −0.8~ −2.0 V (V DS =− 10 V, I D = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

V DSS −30

JEDEC ―

Drain-gate voltage (R GS = 20 kΩ)

V DGR −30

JEITA

―

Gate-source voltage

V GSS

±20

(Note 1)

I D −10

TOSHIBA

2-6J1B

Drain current

Pulse (Note 1)

I DP −40

Weight: 0.080 g (typ.)

Drain power dissipation

(Note 2a)

P D

2.4

Drain power dissipation

(Note 2b)

P D

1.0

Circuit Configuration

Single pulse avalanche energy

E AS

130

(Note 3)

Avalanche current

I AR −10

Repetitive avalanche energy

E AR

0.24

(Note 2a) (Note 4)

Channel temperature

T ch

150

°C

Storage temperature range

T stg −55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2002-02-06

(t = 10 s)

TPC8106-H

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a)

R th (ch-a)

52.1

°C/W

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

R th (ch-a)

125

°C/W

Marking (Note 5)

TPC8106

Type

※

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

(b)

Note 3: V DD = −24 V, T ch = 25°C (initial), L = 0.1 mH, R G = 25 Ω, I AR = −10 A

Note 4: Reptitve rating; pulse width limited by maximum channel temperature

Note 5: ● on lower left of the marking indicates Pin 1.

※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of

manufacture: January to December are denoted by letters A to L respectively.)

2002-02-06

TPC8106-H

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

I GSS

V GS = ±16 V , V DS = 0 V

—

±10

µA

Drain cut−off current

I DSS

V DS = −30 V , V GS = 0 V

—

µA

V (BR) DSS I D = −10 mA , V GS = 0 V

−30

—

Drain−source breakdown voltage

V (BR) DSX I D = −10 mA , V GS = 20 V

−15

—

Gate threshold voltage

V th

V DS = −10 V, I D = −1 mA

−0.8

— −2.0

R DS (ON) V GS = −4 V, I D = −5 A

—

Drain−source ON resistance

mΩ

R DS (ON) V GS = −10 V, I D = −5 A

—

Forward transfer admittance

|Y fs |

V DS = −10 V, I D = −5 A

8.3

16.6

—

Input capacitance

C iss

—

2160

—

Reverse transfer capacitance

C rss

V DS = −10 V, V GS = 0 V, f = 1 MHz

—

530

—

Output capacitance

C oss

—

720

—

Rise time

t r

—

Turn−on time

t on

—

Switching time

Fall time

t f

—

100

—

Turn−off time

t off

—

250

—

Total gate charge (Gate−source

plus gate−drain)

Q g

—

Gate−source charge

Q gs

V DD ≈ −24 V, V GS = −10 V, I D = −10 A

—

Gate−drain (“miller”) charge

Q gd

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

I DRP

—

— −40

Forward voltage (diode)

V DSF

I DR = −10 A, V GS = 0 V

—

1.2

2002-02-06

TPC8106-H

2002-02-06

TPC8106-H

2002-02-06

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