BUZ11.PDF

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N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
BUZ11
BUZ11FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
V DSS
R DS(on)
I D
BUZ11
BUZ11FI
50 V
50 V
<0.04
W
36 A
21 A
<0.04
W
n
TYPICAL R DS(on) = 0.03
W
AVALANCHE RUGGED TECHNOLOGY
n
n
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100 o C
n
3
LOW GATE CHARGE
3
n
2
2
1
HIGH CURRENT CAPABILITY
1
n
175 o C OPERATING TEMPERATURE
n
APPLICATIONS
n
TO-220
ISOWATT220
HIGH CURRENT, HIGH SPEED SWITCHING
n
SOLENOID AND RELAY DRIVERS
n
REGULATORS
n
DC-DC & DC-AC CONVERTERS
n
MOTOR CONTROL, AUDIO AMPLIFIERS
n
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BUZ11
BUZ11FI
V DS
Drain-source Voltage (V GS =0)
50
V
V DG R
Drain- gate Voltage (R GS =20k
W
)
50
V
V GS
Gate-source Voltage
±
20
V
I D
Drain Current (continuous) at T c =25 o C
36
21
A
I DM
Drain Current (pulsed)
144
144
A
P tot
Total Dissipation at T c =25 o C
120
40
W
V ISO
Insulation Withstand Voltage (DC)
'
2000
V
T stg
Storage Temperature
-65 to 175
o C
T j
Max. Operating Junction Temperature
175
o C
DIN Humidity Category (DIN 40040)
E
IEC Climatic Category (DIN IEC 68-1)
55/150/56
November 1996
1/8
11068974.002.png
BUZ11/FI
THERMAL DATA
TO-220
ISOWATT220
R thj-case Thermal Resistance Junction-case
Max
1.25
3.75
o C/W
R thj-amb Thermal Resistance Junction-ambient
Max
62.5
o C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
36
A
d
<1%)
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =25V)
240
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max,
60
mJ
d
<1%)
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
25
A
o
C, pulse width limited by T j max,
d
<1%)
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V (BR)DSS Drain-source
Breakdown Voltage
I D =250
m
A GS =0
50
V
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS =MaxRating T j =125 o C
1
10
m
A
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V GS(th) Gate Threshold Voltage V DS =V GS I D =1mA
2.1
3
4
V
R DS(on) Static Drain-source On
Resistance
V GS =10V I D = 18 A
0.03
0.04
W
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
g fs (
*
)
rrd
Transconductance
V DS =15V I D =18A
10
16
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V f=1MHz V GS = 0
1130
480
140
1500
650
200
pF
pF
pF
SWITCHING
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
t d(on)
t r
t d(off)
t f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD =30V
I D =3A
40
145
220
135
60
210
320
200
ns
ns
ns
ns
R GS =50
W
V GS =10V
2/8
11068974.003.png
BUZ11/FI
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
I SD
I SD M
Source-drain Current
Source-drain Current
(pulsed)
36
144
A
A
V SD (
*
) Forward On Voltage
I SD =72A V GS =0
2.2
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 36 A
di/dt = 100 A/
m
s
90
ns
V DD =30V T j =150 o C
Q rr
0.2
m
C
(
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
Safe Operating Area For TO-220
Safe Operating Area For ISOWATT220
Thermal Impedance For TO-220
Thermal Impedance For ISOWATT220
3/8
11068974.004.png
BUZ11/FI
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-Source On Resistance
4/8
11068974.005.png
BUZ11/FI
Maximum Drain Current vs Temperature
Gate Charge vs Gate-Source Voltage
Capacitance Variation
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-Drain Diode Forward Characteristics
5/8
11068974.001.png

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