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FEATURES
BV
DSS
= 600 V
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n Extended Safe Operating Area
n Lower Leakage Current : 25 mA (Max.) @ V
DS
= 600V
n Lower R
DS(ON)
: 3.892 W (Typ.)
R
DS(on)
= 5 W
I
D
= 1.3 A
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
Units
V
DSS
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
)
Continuous Drain Current (T
C
=100
)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8Ä from case for 5-seconds
600
1.3
0.82
6
V
o
o
I
D
C
A
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
O
1
A
V
mJ
A
mJ
V/ns
W
W/
_
O
2
138
1.3
2.3
3.0
23
0.18
O
1
O
1
O
3
o
C
P
D
o
C
T
J
, T
STG
- 55 to +150
o
C
T
L
300
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
--
--
5.5
62.5
o
/W
q
q
C
Electrical Characteristics
(T
C
=25
unless otherwise specified)
o
C
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
BV
DSS
BV/T
J
V
GS(th)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
600
--
2.0
--
--
--
--
--
0.77
--
--
--
--
--
--
--
4.0
100
-100
25
250
V
V/
V
V
GS
=0V,I
D
=250A
I
D
=250A See Fig 7
V
DS
=5V,I
D
=250A
V
GS
=30V
V
GS
=-30V
V
DS
=600V
V
DS
=480V,T
C
=125
m
D D
o
C
m
m
I
GSS
nA
I
DSS
Drain-to-Source Leakage Current
A
o
C
R
DS(on)
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( ÃMillerÄ ) Charge
--
--
5.0
W
V
GS
=10V,I
D
=0.65A
V
DS
=50V,I
D
=0.65A
4
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
--
--
--
--
--
--
--
--
--
--
--
1.08
315
--
410
45
17
35
40
90
40
21
--
--
4
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
38
14
12
15
41
16
15
2.6
6.7
pF
ns
V
DD
=300V,I
D
=2A,
R
G
=18
See Fig 13
W
4
5
nC
V
DS
=480V,V
GS
=10V,
I
D
=2A
See Fig 6 & Fig 12
4
5
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
O
1
4
--
--
--
--
--
--
--
--
280
0.62
1.3
6
1.4
--
--
A
Integral reverse pn-diode
in the MOSFET
T
J
=25,I
S
=1.3A,V
GS
=0V
T
J
=2,I
F
=2A
di
F
/dt=100A/s
V
ns
C
o
C
o
C
m
m
4
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=150mH, I
AS
=1.3A, V
DD
=50V, R
G
=27
, Starting T
J
=25
I
SD
2A, di/dt
80A/
s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250
s, Duty Cycle
2%
Essentially Independent of Operating Temperature
W
o
C
_
_
m
_
o
C
_
m
m
O
1
2
O
3
4
5
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
V
GS
Top : 1 5 V
1 0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bott om : 4.5 V
m
m
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
m
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
!"#
%
&
$
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
m
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
2+&-3+&
4056(7
0
m
0
0
"
-
"
-
"
1.
Fig 11. Thermal Response
q
!
"#$%&'
()&*+,
#
-
-
.
/
q
!
Fig 12. Gate Charge Test Circuit & Waveform
!"!#$%
W
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
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maciejek62
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