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High-speed double diode array

DISCRETE SEMICONDUCTORS

DATA SHEET

MBD128

BAV70S

High-speed double diode array

Product speciﬁcation

Supersedes data of 1997 Aug 27

File under Discrete Semiconductors, SC01

1997 Oct 21

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Philips Semiconductors

Product speciﬁcation

High-speed double diode array

BAV70S

FEATURES

PINNING

·

Small plastic SMD package

PIN

DESCRIPTION

·

High switching speed: max. 4 ns

1

anode (a1)

·

Continuous reverse voltage:

max. 75 V

2

anode (a2)

3

common cathode (k1)

·

Repetitive peak reverse voltage:

max. 85 V

4

anode (a3)

5

anode (a4)

·

Repetitive peak forward current:

max. 450 mA.

6

common cathode (k2)

APPLICATIONS

·

654

General purpose switching in e.g.

surface mounted circuits.

handbook, halfpage

6

5

4

DESCRIPTION

The BAV70S consists of two dual

high-speed switching diodes with

common cathodes, fabricated in

planar technology, and encapsulated

in the small SMD SOT363 plastic

package.

123

1

2

3 MGL160

Top view

MSA370

Marking code: A4t.

Fig.1 Simplified outline (SOT363) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

V RRM

repetitive peak reverse voltage

-

85

V

V R

continuous reverse voltage

-

75

V

I F

continuous forward current

single diode loaded; see Fig.2

-

250

mA

all diodes loaded; see Fig.2

-

100

mA

I FRM

repetitive peak forward current

-

450

mA

I FSM

non-repetitive peak forward current square wave; T j =25

C prior to

surge; see Fig.4

t=1

m

s

-

4

A

t=1ms

-

1

A

t=1s

-

0.5

A

P tot

total power dissipation

T s =60 ° C; note 1

-

350

mW

T stg

storage temperature

-

65

+150

C

T j

junction temperature

-

65

+150

C

Note

1. One or more diodes loaded.

1997 Oct 21

2

°

°

°

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Philips Semiconductors

Product speciﬁcation

High-speed double diode array

BAV70S

ELECTRICAL CHARACTERISTICS

T j =25 ° C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

V F

forward voltage

see Fig.3

I F = 1 mA

715

mV

I F = 10 mA

855

mV

I F =50mA

1

V

I F = 150 mA

1.25

V

I R

reverse current

see Fig.5

V R = 25 V

30

nA

V R = 75 V

2.5

m A

V R = 25 V; T j = 150

°

C

60

m

A

V R = 75 V; T j = 150

°

C

100

m

A

C d

diode capacitance

V R = 0; f = 1 MHz; see Fig.6

1.5

pF

t rr

reverse recovery time

when switched from I F = 10 mA to I R = 10 mA;

R L = 100 W ; measured at I R = 1 mA; see Fig.7

4

ns

V fr

forward recovery voltage

when switched from I F = 10 mA; t r = 20 ns; see Fig.8

1.75

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-s

thermal resistance from junction to soldering point note 1

255

K/W

Note

1. One or more diodes loaded.

1997 Oct 21

3

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Philips Semiconductors

Product speciﬁcation

High-speed double diode array

BAV70S

GRAPHICAL DATA

MBK148

300

MBG382

300

handbook, halfpage

I F

(mA)

single diode loaded

I F

(mA)

(1)

(2)

(3)

200

200

all diodes loaded

100

100

0

0

0

1

2

0

100

T s (

°

C)

200

V F (V)

C; typical values.

(2) T j =25 ° C; typical values.

(3) T j =25 ° C; maximum values.

°

Fig.2 Maximum permissible continuous forward

current as a function of soldering point

temperature.

Fig.3 Forward current as a function of

forward voltage.

10 2

MBG704

handbook, full pagewidth

I FSM

(A)

10

1

10 - 1

1

10

10 2

10 3

t p ( m s)

10 4

Based on square wave currents.

T j =25 ° C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1997 Oct 21

4

(1) T j = 150

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Philips Semiconductors

Product speciﬁcation

High-speed double diode array

BAV70S

10 2

MGA885

MBG446

0.8

handbook, halfpage

I R

( A)

C d

(pF)

V = 75 V

R

10

0.6

max

1

75 V

0.4

10

1

25 V

0.2

typ

2

typ

10

0

0

100

o

200

0

4

8

12

16

T ( C)

j

V R (V)

f = 1 MHz; T j =25 ° C.

Fig.5 Reverse current as a function of

junction temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1997 Oct 21

5

m

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