EMIF02-USB05C2.pdf

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2 LINES EMI FILTER INCLUDING ESD PROTECTION
®
EMIF02-USB05C2
IPAD™
2 LINES EMI FILTER
INCLUDING ESD PROTECTION
MAIN APPLICATION
When EMI filtering is ESD sensitive equipment is
required:
■
Mobile phones and communication systems
■
Computers, printers and MCU boards
DESCRIPTION
The EMIF02-USB05C2 is a highly integrated array
designed to suppress EMI / RFI noise for USB port
filtering.
The EMIF02-05USBC2 Flip-Chip packaging
means the package size is equal to the die size.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15kV. This device is designed to be fully
compatible with all USB standards.
Coated Flip-Chip
(8 Bumps)
Table 1: Order Code
Part Number
Marking
EMIF02-USB05C2
GV
Figure 1: Pin Configuration (ball side)
2
1
BENEFITS
■
2 x EMI low-pass filter + 2 lines ESD protected
IO4
V CC
A
■
1.5k
pull-up included
B
O2
I2
■
High efficiency in EMI filtering
■
Lead free coated package
O1
I1
C
Very low PCB space consuming:
1.92mm x 0.92mm
■
IO3 GND
D
■
Very thin package: 0.69mm
■
High reliability offered by monolithic integration
■
High reducing of parasitic elements through
integration and wafer level packaging
Figure 2: Configuration
■
USB 2.0 full speed (12Mbps), OTG compliant
IO4
V CC
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4
IO3
R3
R1
15kV (air discharge)
Input 2
Output2
8kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
GND
Input 1
R2
Output 1
TM: IPAD is a trademark of STMicroelectronics.
March 2005
REV. 1
1/7
Ω
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EMIF02-USB05C2
Table 2: Absolute Ratings (limiting values)
Symbol
Parameter and test conditions
Value
Unit
T j
Maximum junction temperature
125
°C
T op
Operating temperature range
- 40 to + 85
°C
T stg
Storage temperature range
- 55 to + 150
°C
Table 3: Electrical Characteristics (T amb = 25°C )
Symbol
Parameter
I
V BR Breakdown voltage
I RM
Leakage current @ V RM
I R
V RM Stand-off voltage
V BR
V RM
I RM
V
I RM
I R
V RM
V BR
C line Input capacitance per line
Symbol
Test conditions
Tolerance
Min.
Typ.
Max.
Unit
V BR
I R = 1 mA
6
9
V
I RM
V RM = 5V per line
1
µA
R 1 , R 2
I = 10 mA
± 5%
33
Ω
R 3
I = 1 mA
± 5%
1.5
k
Ω
C line
@ 0V
30
pF
Matching
Serial resistance matching
1
%
2/7
438464353.001.png
EMIF02-USB05C2
Figure 3: S21 (dB) attenuation measurement
Figure 4: Analog crosstalk measurements
0.00
0.00
dB
dB
- 10.00
- 20.00
- 10.00
- 30.00
- 40.00
- 20.00
- 50.00
- 60.00
- 70.00
- 30.00
- 80.00
- 90.00
- 40.00
- 100.00
100.0k
1.0M
10.0M
100.0M
1.0G
100.0k
1.0M
10.0M
100.0M
1.0G
f/Hz
f/Hz
Figure 5: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 6: ESD response to IEC61000-4-2 (-15kV
air discharge) on one input V(in) and on one
output (Vout)
V(in)
5V/d
V(in)
5V/d
V(out)
5V/d
V(out)
5V/d
100ns/d
100ns/d
Figure 7: Junction capacitance versus reverse
voltage applied
C
LINE
(pF)
35
30
25
20
15
10
5
0
0
1
2
3
4
5
V()
LINE
3/7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
f/Hz
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EMIF02-USB05C2
Figure 8: Aplac model device structure
Ls
Rs
c2
c1
Rs
Ls
Port1
Port2
50
50
Lbump Rbump
A1
D2
A2
bulk
R1
MODEL = D2
b2
Rbump
Lbump
R2
Lbump Rbump
b1
Rbump
Rbump
D1
MODEL = D1
Lbump
Lbump
Lbump
MODEL = D1
MODEL = D1
MODEL = D1
MODEL = D1
Rbump
bulk
bulk
bulk
c2 Rbump
Lbump
R3
Lbump Rbump
c1
Lgnd
bulk
bulk
Cgnd
MODEL = D1
MODEL = D1
Rgnd
bulk
bulk
Figure 9: Aplac model parameters
Variables
aplacvar Ls 600pH
aplacvar Rs 200m
aplacvar R2 33
aplacvar R3 33
aplacvar R1 1.5k
aplacvar Cz_D1 15pF
aplacvar Rs_D1 1
aplacvar Cz_D2 300pF
aplacvar Rs_D2 0.3
aplacvar Lgnd 100pH
aplacvar Rgnd 100m
aplacvar Cgnd 0.4pF
aplacvar Lbump 50pH
aplacvar Rbump 20m
Diode D2
BV=7
IBV=1m
CJO=Cz_d2
M=0.3333
RS=Rs_d2
VJ=0.6
TT=100n
Diode D1
BV=7
IBV=1m
CJO=Cz_d1
M=0.3333
RS=Rs_d1
VJ=0.6
TT=100n
4/7
A1
A1
Lbump Rbump
Lbump Rbump
D2
D2
A2
A2
bulk
bulk
R1
R1
MODEL = D2
MODEL = D2
Rbump
Rbump
b2
b2
Rbump
Rbump
Lbump
Lbump
R2
R2
Lbump Rbump
Lbump Rbump
b1
b1
Rbump
Rbump
D1
D1
Lbump
Lbump
Lbump
Lbump
MODEL = D1
MODEL = D1
Lbump
MODEL = D1
MODEL = D1
MODEL = D1
MODEL = D1
Rbump
MODEL = D1
MODEL = D1
MODEL = D1
MODEL = D1
bulk
bulk
bulk
bulk
bulk
bulk
c2 Rbump
c2 Rbump
Lbump
Lbump
R3
R3
Lbump Rbump
Lbump Rbump
c1
c1
Lgnd
bulk
bulk
bulk
bulk
Cgnd
Rgnd
MODEL = D1
MODEL = D1
MODEL = D1
MODEL = D1
bulk
bulk
bulk
bulk
438464353.009.png
EMIF02-USB05C2
Figure 10: Ordering Information Scheme
EMIF yy - xxx zz Cx
EMI Filter
Number of lines
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
C = Coated Flip-Chip
x = 1: 500µm, Bump = 315µm
= 2: Leadfree Pitch = 500µm, Bump = 315µm
= 3: Leadfree Pitch = 400µm, Bump = 250µm
Figure 11: FLIP-CHIP Package Mechanical Data
500µm ± 10
315µm ± 50
690µm ± 65
0.92mm ± 50µm
Figure 12: Foot Print Recommendations
Figure 13: Marking
Dot, ST logo
xx = marking
365
240
z = packaging location
yww = datecode
(y = year
ww = week)
Copper pad Diameter :
250µm recommended , 300µm max
E
Solder stencil opening : 330µm
x
y
x
w
z
w
Solder mask opening recommendation :
340µm min for 315µm copper pad diameter
All dimensions in µm
5/7
Information
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