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QUAD 2-INPUT NAND SCHMIDT TRIGGERS
HCC/HCF4093B
QUAD 2-INPUT NAND SCHMIDT TRIGGERS
. SCHMITT-TRIGGER ACTION ON EACH INPUT
WITH NO EXTERNAL COMPONENTS
. NO LIMIT ON INPUT RISE AND FALL TIMES
. STANDARDIZED SYMMETRICAL OUTPUT
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
. QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
CHARACTERISTICS
. 5V, 10V, AND 15V PARAMETRIC RATINGS
. INPUT CURRENT OF 100nA AT 18V AND
25
. 100% TESTED FOR QUIESCENT CURRENT
. MEETS ALL REQUIREMENTS OF JEDEC TEN-
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4093BF
. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
°
HCF4093BM1
HCF4093BEY
HCF4093BC1
PIN CONNECTIONS
DESCRIPTION
The HCC4093B (extended temperature range) and
HCF4093B (intermediate temperature range) are
available in 14-lead dual in-line plastic or ceramic
package and plastic micropackage. The
HCC/HCF4093B consists of four Schmitt-trigger cir-
cuits. Each circuit functions as a two-input NAND
gate with Schmitt-trigger action on both inputs. The
gate switches at different points for positive and ne-
gative-going signals.
The difference between the positive voltage (V P )
and the negative voltage (V N ) is defined as hys-
teresis voltage (V H ) (see fig. 1).
June 1989
1/13
. HYSTERESIS VOLTAGE TYPICALLY 0.9V AT
V DD = 5V AND 2.3V AT V DD = 10V
. NOISE IMMUNITY GREATER THAN 50% OF
V DD (typ.)
°
C FOR HCC DEVICE
TATIVE STANDARD N
104209798.002.png
HCC/HCF4093B
FUNCTIONAL DIAGRAM
1 of 4 Schmitt triggers
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD *
Supply Voltage : HCC Types
HCF Types
– 0.5 to + 20
– 0.5 to + 18
V
V
V I
Input Voltage
– 0.5 to V DD + 0.5
V
I I
DC Input Current (any one input)
±
10
mA
P tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T op = Full Package-temperature Range
200
mW
100
mW
T op
Operating Temperature : HCC Types
HCF Types
–55to+125
–40to+85
C
°
C
T stg
Storage Temperature
– 65 to + 150
°
C
Stresses above those listed under ”Absolute Maximum Ratings ”may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specifi cation is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to V SS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage : HCC Types
HCF Types
3to18
3to15
V
V
V I
Input Voltage
0 to V DD
V
T op
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
–40to+85
C
°
C
2/13
°
°
104209798.003.png
HCC/HCF4093B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V I
V O
|I O |V DD
T Low *
25
°
C
T Hi g h *
Unit
(V)
(V)
(
m
A) (V) Min. Max. Min. Typ. Max. Min. Max.
I L
Quiescent
Current
0/ 5
5
1
0.02
1
30
HCC
Types
0/10
10
2
0.02
2
60
0/15
15
4
0.02
4
120
0/20
20
20
0.04 20
600
m
A
HCF
Types
0/ 5
5
4
0.02
4
30
0/10
10
8
0.02
8
60
0/15
15
16
0.02 16
120
V P
Positive Trigger
Threshold Voltage
a
5
2.2
3.6
2.2
2.9
3.6
2.2
3.6
a
10
4.6
7.1
4.6
5.9
7.1
4.6
7.1
a
15
6.8 10.8 6.8
8.8 10.8 6.8 10.8
V
b
5
2.6
4
2.6
3.3
4
2.6
4
b
10
5.6
8.2
5.6
7
8.2
5.6
8.2
b
15
6.3 12.7 6.3
9.4 12.7 6.3 12.7
V N
Negative Trigger
Threshold Voltage
a
5
0.9
2.8
0.9
1.9
2.8
0.9
2.8
a
10
2.5
5.2
2.5
3.9
5.2
2.5
5.2
a
15
4
7.4
4
5.8
7.4
4
7.4
V
b
5
1.4
3.2
1.4
2.3
3.2
1.4
3.2
b
10
3.4
6.6
3.4
5.1
6.6
3.4
6.6
b
15
4.8
9.6
4.8
7.3
9.6
4.8
9.6
V H
Hysteresis Voltage a
5
0.3
1.6
0.3
0.9
1.6
0.3
1.6
a
10
1.2
3.4
1.2
2.3
3.4
1.2
3.4
a
15
1.6
5
1.6
3.5
5
1.6
5
V
b
5
0.3
1.6
0.3
0.9
1.6
0.3
1.6
b
10
1.2
3.4
1.2
2.3
3.4
1.2
3.4
b
15
1.6
5
1.6
3.5
5
1.6
5
V OH
Output High
Voltage
0/ 5
< 1
5
4.95
4.95
4.95
0/10
< 1 10 9.95
9.95
9.95
V
0/15
< 1 15 14.95
14.95
14.95
V OL
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
10/0
< 1 10
0.05
0.05
0.05
V
15/0
< 1 15
0.05
0.05
0.05
I OH
Output
Drive
Current
0/ 5
2.5
5
– 2
– 1.6 – 3.2
– 1.15
HCC
Types
0/ 5
4.6
5 – 0.64
– 0.51 – 1
– 0.36
0/10
9.5
10 – 1.6
– 1.3 – 2.6
– 0.9
0/15 13.5
15 – 4.2
– 3.4 – 6.8
– 2.4
mA
0/ 5
2.5
5 – 1.53
– 1.36 – 3.2
– 1.1
HCF
Types
0/ 5
4.6
5 – 0.52
– 0.44 – 1
– 0.36
0/10
9.5
10 – 1.3
– 1.1 – 2.6
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
a : input on terminals 1, 5, 8, 12 or 2, 6, 9, 13 ; other inputs to V DD .
b : input on terminals 1 and 2, 5 and 6, 8 and 9, or 12 and 13 ; other inputs to V DD .
*T Lo w =–55
Cfor HCC device : -40
°
Cfor HCF device.
*T High = +125
°
Cfor HCC device : +85
°
C for HCF device.
3/13
°
104209798.004.png
HCC/HCF4093B
STATIC ELECTRICAL CHARACTERISTICS ( continued)
Test Conditions
Value
Symbol
Parameter
V I
V O
|I O |V DD
T Low *
25
°
C
T Hi g h *
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I OL
Output
Sink
Current
0/ 5
0.4
5
0.64
0.51
1
0.36
0/10
0.5
10
1.6
1.3
2.6
0.9
0/15
1.5
15
4.2
3.4
6.8
2.4
mA
0/ 5
0.4
5
0.52
0.44
1
0.36
0/10
0.5
10
1.3
1.1
2.6
0.9
0/15
1.5
15
3.6
3.0
6.8
2.4
I IH ,I IL Input
Leakage
Current
HCC
Types
0/18
18
±
0.1
±
10 -5
±
0.1
±
1
m
A
Any Input
HCF
Types
0/15
15
±
0.3
±
10 -5
±
0.3
±
1
C I
Input Capacitance
Any Input
5
7.5
pF
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25
°
C, C L = 50pF, R L = 200k
W
,
typical temperature coefficient for all V DD = 0.3%/
°
C values , all input rise and fall time = 20ns)
Symbol
Parameter
Test Conditions
Value
Unit
V DD (V) Min. Typ. Max.
t PLH ,t PHL Propagation Delay Time
5
190
380
10
90
180
ns
15
65
130
t TL H ,t THL Transition Time
5
100
200
10
50
100
ns
15
40
80
Figure1 : Hysteresis Definition, Characteristics and Test Setup.
(a) Definition of V P ,V N and V H
(b) Transfer characteristics of 1 of 4 gates
4/13
104209798.005.png
HCC/HCF4093B
(c) Test setup
F igure 2 : Input and Output Characteristics.
F igure 3 : Typical Current and Voltage Transfer Characteristics.
Figure 4 : Typical Voltage Transfer Characteristics as a Function of Temperature, and Test Circuit.
5/13
104209798.001.png
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