bta16.pdf

BTA16, BTB16 and T16 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD

16A TRIAC S

Table 1: Main Features

Symbol

Value

Unit

I T(RMS)

V DRM /V RRM

600, 700 and 800

I GT (Q 1 )

10 to 50

DESCRIPTION

Available either in through-hole or surface-mount

packages, the BTA16, BTB16 and T16 triac series

is suitable for general purpose AC switching. They

can be used as an ON/OFF function in applica-

tions such as static relays, heating regulation, in-

duction motor starting circuits... or for phase

control operation in light dimmers, motor speed

controllers, ...

D 2 PA K

(T16-G)

The snubberless versions (BTA/BTB...W and T16

series) are specially recommended for use on in-

ductive loads, thanks to their high commutation

performances. By using an internal ceramic pad,

the BTA series provides voltage insulated tab (rat-

ed at 2500V RMS ) complying with UL standards

(File ref.: E81734).

TO-220AB Insulated

(BTA16)

TO-220AB

(BTB16)

Table 2: Order Codes

Part Number

Marking

BTA16-xxxxxRG

See page table 8 on

page 8

BTB16-xxxxxRG

T16xx-xxxG

February 2006

REV. 7

1/9

BTA16, BTB16 and T16 Series

Table 3: Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

I T(RMS)

RMS on-state current (full sine

wave)

D 2 PAK /

TO-220AB

T c = 100°C

TO-220AB Ins.

T c = 15°C

I TSM

Non repetitive surge peak on-state

current (full cycle, T j initial = 25°C)

F = 50 Hz

t = 20 ms

160

F = 60 Hz

t = 16.7 ms

168

I ² t

I ² t Value for fusing

t p = 10 ms

144

A ² s

dI/dt

Critical rate of rise of on-state cur-

rent I G = 2 x I GT , t r

≤

100 ns

F = 120 Hz

T j = 125°C

A/µs

V DSM /V RSM

Non repetitive surge peak off-state

voltage

t p = 10 ms

T j = 25°C

V DSM /V RSM

+ 100

I GM

Peak gate current

t p = 20 µs

T j = 125°C

P G(AV)

Average gate power dissipation

T j = 125°C

T stg

T j

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Tables 4: Electrical Characteristics (T j = 25°C, unless otherwise specified)

■

SNUBBERLESS and Logic Level (3 quadrants)

T16

BTA16 / BTB16

Symbol

Test Conditions

Quadrant

Unit

T1635 SW

I GT (1)

I - II - III MAX. 35

V D = 12 V R L = 33

Ω

V GT

I - II - III MAX.

1.3

V GD

V D = V DRM R L = 3.3 k

Ω

I - II - III MIN.

0.2

T j = 125°C

I H (2)

I T = 500 mA

MAX. 35

I L

I G = 1.2 I GT

I - III

MAX.

dV/dt (2) V D = 67 %V DRM gate open

T j = 125°C MIN. 500

500 1000 V/µs

(dV/dt)c = 0.1 V/µs

T j = 125°C

8.5

(dI/dt)c (2)

(dV/dt)c = 10 V/µs

T j = 125°C

MIN.

3.0

A/ms

Without snubber

T j = 125°C

8.5

2/9

BTA16, BTB16 and T16 Series

■

Standard (4 quadrants)

BTA16 / BTB16

Symbol

Test Conditions

Quadrant

Unit

I GT (1)

V D = 12 V R L = 33

Ω

I - II - III

MAX.

100

V GT

ALL

MAX.

1.3

V GD

V D = V DRM R L = 3.3 k

Ω

T j = 125°C

ALL

MIN.

0.2

I H (2)

I T = 500 mA

MAX.

I L

I G = 1.2 I GT

I - III - IV

MAX.

120

dV/dt (2) V D = 67 %V DRM gate open

T j = 125°C MIN.

200

400

V/µs

(dV/dt)c (2) (dI/dt)c = 7 A/ms

T j = 125°C MIN.

V/µs

Table 5: Static Characteristics

Symbol

Test Conditions

Value

Unit

V T (2)

I TM = 22.5 A t p = 380 µs

T j = 25°C

MAX.

1.55

V to (2)

Threshold voltage

T j = 125°C

MAX.

0.85

R d (2)

Dynamic resistance

T j = 125°C

MAX.

Ω

I DRM

I RRM

V DRM = V RRM

T j = 25°C

MAX.

µA

T j = 125°C

Note 1: minimum I GT is guaranted at 5% of I GT max.

Note 2: for both polarities of A2 referenced to A1.

Table 6: Thermal resistance

Symbol

Parameter

Value Unit

R th(j-c)

Junction to case (AC)

D 2 PAK / TO-220AB

1.2

°C/W

TO-220AB Insulated

2.1

R th(j-a)

Junction to ambient

S = 1 cm ²

D 2 PAK

°C/W

TO-220AB / TO-220AB Insulated

S = Copper surface under tab.

3/9

BTA16, BTB16 and T16 Series

Figure 1: Maximum power dissipation versus

RMS on-state current (full cycle)

Figure 2: RMS on-state current versus case

temperature (full cycle)

P(W)

T(RMS)

(A)

BTB / T16

BTA

T(RMS)

(A)

T (°C)

100

125

Figure 3: RMS on-state current versus ambient

temperature (printed circuit board FR4, copper

thickness: 35µm) (full cycle)

Figure 4: Relative variation of thermal

impedance versus pulse duration

T(RMS)

(A)

K=[Z /R

th th ]

4.0

1E+0

3.5

DPAK

(S=1cm )

Zth(j-c)

3.0

2.5

Zth(j-a)

2.0

1E-1

1.5

1.0

0.5

T (°C)

t (s)

0.0

1E-2

100

125

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

Figure 5: On-state characteristics (maximum

values)

Figure 6: Surge peak on-state current versus

number of cycles

I (A)

TSM

(A)

200

180

T max.

V = 0.85V

R = 25 m

160

100

Ω

140

t=20ms

One cycle

j T max.

120

Non repetitive

T initial=25°C

100

T = 25°C

Repetitive

T =85°C

V (V)

Number of cycles

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

100

1000

4/9

BTA16, BTB16 and T16 Series

Figure 7: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width t p < 10 ms

and corresponding value of I 2 t

Figure 8: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature (typical values)

TSM

(A), I t (A s)

I ,I ,I [T] /

GT H L j I ,I ,I [T =25°C]

GT H L j

2.5

3000

T initial=25°C

dI/dt limitation:

50A/µs

2.0

I GT

1000

I TSM

1.5

1.0

I H & I L

I 2

0.5

t (ms)

T (°C)

100

0.0

0.01

0.10

1.00

10.00

-40

-20

100

120

140

Figure 9: Relative variation of critical rate of

decrease of main current versus (dV/dt)c

(typical values) (Snubberless & Logic level

types)

Figure 10: Relative variation of critical rate of

decrease of main current versus (dV/dt)c

(typical values) (Standard types)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

(dI/dt)c [T ] /

j (dI/dt)c [T s

pecified]

2.0

1.8

1.6

1.4

1.2

T1635/CW/BW

1.0

0.8

0.6

(dV/dt)c (V/µs)

T (°C)

0.4

0.1

1.0

10.0

100.0

100

125

Figure 11: D 2 PAK Thermal resistance junction to

ambient versus copper surface under tab (printed

circuit board FR4, copper thickness: 35 µm)

th(j-a)

(°C/W)

DPAK

S(cm²)

5/9

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