2SK2631.PDF

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Ordering number : ENN6600
2SK2631
N-Channel Silicon MOSFET
2SK2631
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance.
• Smaller amount of total gate charge.
Package Dimensions
unit : mm
2083B
[2SK2631]
6.5
5.0
2.3
4
0.5
0.85
0.7
1.2
0.6
0.5
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3
2.3
SANYO : TP
unit : mm
2092B
[2SK2631]
6.5
2.3
5.0
0.5
4
0.85
0.5
1
2
3
0.6
1.2
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3
2.3
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
63000 TS IM TA-3024
No.6600-1/5
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2SK2631
Specifications
Absolute Maximum Ratings at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
V DSS
800
V
Gate-to-Source Voltage
V GSS
± 30
V
Drain Current (DC)
I D
1
A
Drain Current (Pulse)
I DP
PW £ 10 m s, duty cycle £ 1%
3
A
Tc=25 ° C
30
W
Allowable Power Dissipation
P D
1.0
W
Channel Temperature
Tch
150
° C
Storage Temperature
Tstg
--55 to +150
° C
Electrical Characteristics at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V (BR)DSS
I D =1mA, V GS =0
800
V
Zero-Gate Voltage Drain Current
I DSS
V DS =800V, V GS =0
1.0
mA
Gate-to-Source Leakage Current
I GSS
V GS = ± 30V, V DS =0
± 100
nA
Cutoff Voltage
V GS (off)
V DS =10V, I D =1mA
3.5
5.5
V
Forward Transfer Admittance
|yfs|
V DS =10V, I D =0.5A
370
740
ms
Static Drain-to-Source On-State Resistance R DS (on)
I D =0.5A, V GS =15V
7.5
10
W
Input Capacitance
Ciss
V DS =20V, f=1MHz
300
pF
Output Capacitance
Coss
V DS =20V, f=1MHz
85
pF
Reverse Transfer Capacitance
Crss
V DS =20V, f=1MHz
40
pF
Total Gate Charge
Qg
V DS =200V, I D =1A, V GS =10V
8
nC
Turn-ON Delay Time
t d (on)
See specified Test Circuit
12
ns
Rise Time
t r
See specified Test Circuit
8
ns
Turn-OFF Delay Time
t d (off)
See specified Test Circuit
27
ns
Fall Time
t f
See specified Test Circuit
16
ns
Diode Forward Voltage
V SD
I S =1A, V GS =0
0.82
1.2
V
Marking : K2631
Switching Time Test Circuit
V DD =200V
V IN
15V
0V
V IN
I D =0.5A
R L =400
½
s
D.C. ² 0.5%
µ
D
V OUT
G
2SK2631
P. G
R GS
50
½
S
No.6600-2/5
PW=1
11064432.001.png
2SK2631
3.0
I D -- V DS
2.0
I D -- V GS
V DS =10V
1.8
T c= --25°C
2.5
1.6
8 V
1.4
2.0
25°C
1.2
1.5
1.0
75°C
7V
0.8
1.0
0.6
0.4
0.5
V GS =6V
0.2
0
0
5
10
15
20
25
30
35
40
45
50
0
0
5
10
15
20
Drain-to-Source Voltage, V DS -- V
IT02479
Gate-to-Source Voltage, V GS -- V
IT02480
R DS (on) -- V GS
R DS (on) -- Tc
16
18
Tc=25
°
C
I D =1.0A
16
14
14
12
12
10
8
10
0.1A
6
8
4
2
6
0
--75
0
2
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V GS -- V
IT02481
Case Temperature, Tc -- °C
IT02482
|yfs| -- I D
V GS (off) -- Tc
10
7
V DS =10V
V DS =10V
I D =1mA
7
5
6
3
2
5
1.0
7
5
4
3
2
3
0.1
7
2
5
3
1
2
0.01
0
0.1
2
3
5
7
1.0
2
3
--50
--25
0
25
50
75
100
125
150
Drain Current, I D -- A
IT02483
Case Temperature, Tc -- °C
IT02484
I F -- V SD
Ciss, Coss, Crss -- V DS
10
1000
V GS =0
7
f=1MHz
5
3
7
2
5
Ciss
1.0
3
7
5
3
2
2
0.1
100
7
5
3
7
2
5
0.01
3
7
5
3
2
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT02485
10
0
5
10
15
20
25
30
Drain-to-Source Voltage, V SD -- V
Drain-to-Source Voltage, V DS -- V
IT02486
No.6600-3/5
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2SK2631
10
V GS -- Qg
100
SW Time -- I D
V DS =200V
I D =1A
V DD =200V
V GS =15V
9
7
8
5
7
3
6
2
5
4
t d (on)
10
t r
3
7
2
5
1
0
3
0
1
2
3
4
5
6
7
8
0.1
2
3
5
7
1.0
2
Total Gate Charge, Qg -- nC
IT02487
Drain Current, I D -- A
IT02488
A S O
P D -- Tc
10
40
7
5
I DP =3A
10 µ
s
35
3
2
I D =1A
30
1.0
7
25
5
3
20
2
0.1
Operation in
this area is
limited by R DS (on).
15
7
10
5
3
5
2
C
Single pulse
°
0.01
0
1.0
23 57 10
23 57 100
23 57 1000
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, V DS -- V
IT02489
Case Temperature, Tc -- °C
IT02490
P D -- Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
IT02491
No.6600-4/5
Tc=25
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2SK2631
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to
change without notice.
PS
No.6600-5/5
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