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4n25(g)v-4n35(g)v
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors
Optocoupler with Phototransistor Output
Description
The 4N25(G)V/ 4N35(G)V series consists of a photo-
transistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique , providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
14827
For appl. class I – IV at mains voltage
3
300 V
600 V
according to VDE 0884, table 2, suitable for:
3
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
B
C
E
6
5
4
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
1
2
3
VDE 0884
Optocoupler for electrical safety requirements
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage
A (+) C (–) n.c.
3
400 V RMS )
VDE 0804
Telecommunication apparatus and data
processing
IEC 65
Safety for mains-operated electronic and related
household apparatus
Order Instruction
Ordering Code
CTR Ranking
Remarks
4N25V/ 4N25GV 1) >20%
4N35V/ 4N35GV 1) >100%
1) G = Leadform 10.16 mm; G is not marked on the body
Rev. A4, 11–Jan–99
1 (10)
For appl. class I – III at mains voltage
11073410.026.png 11073410.027.png 11073410.028.png 11073410.029.png 11073410.001.png 11073410.002.png 11073410.003.png 11073410.004.png 11073410.005.png
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors
Features
Approvals:
Rated recurring peak voltage (repetitive)
V IORM = 600 V RMS
Creepage current resistance according to
VDE 0303/IEC 112
C omparative T racking I ndex: CTI = 275
Thickness through insulation
BSI : BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
FIMKO (SETI): EN 60950,
Certificate number 12399
U nderwriters L aboratory (UL) 1577 recognized,
file number E-76222
VDE 0884, Certificate number 94778
.
0.75 mm
General features:
Isolation materials according to UL94-VO
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
Climatic classification 55/100/21 (IEC 68 part 1)
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high C ommon M ode R ejection
Low temperature coefficient of CTR
Coupling System A
VDE 0884 related features:
Rated impulse voltage (transient overvoltage)
V IOTM = 6 kV peak
Isolation test voltage
(partial discharge test voltage) V pd = 1.6 kV
Rated isolation voltage (RMS includes DC)
V IOWM = 600 V RMS (848 V peak)
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
V R
5
V
Forward current
I F
60
mA
Forward surge current
t p
3
10 s
I FSM
3
A
Power dissipation
T amb
3
25
°
C
P V
100
mW
Junction temperature
T j
125
°
C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V CEO
32
V
Emitter collector voltage
V CEO
7
V
Collector current
I C
50
mA
Collector peak current
t p /T = 0.5, t p
3
10 ms
I CM
100
mA
Power dissipation
T amb
3
25
°
C
P V
150
mW
Junction temperature
T j
125
°
C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
t = 1 min
V IO
3.75
kV
Total power dissipation
T amb
3
25
°
C
P tot
250
mW
Ambient temperature range
T amb
–55 to +100
°
C
Storage temperature range
T stg
–55 to +125
°
C
Soldering temperature
2 mm from case, t
3
10 s
T sd
260
°
C
2 (10)
Rev. A4, 11–Jan–99
11073410.006.png 11073410.007.png 11073410.008.png 11073410.009.png 11073410.010.png 11073410.011.png 11073410.012.png
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors
Electrical Characteristics (T amb = 25 ° C)
Input (Emitter)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I F = 50 mA
T amb = 100
V F
1.2
1.4
V
°
C
Junction capacitance
V R = 0, f = 1 MHz
C j
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter voltage I C = 1 mA
V CEO
32
V
Emitter collector voltage I E = 100 A
V ECO
7
V
Collector emitter cut-off
current
V CE = 10 V, I F = 0,
T amb = 100
I CEO
50
nA
°
C
V CE = 30 V, I F = 0,
T amb = 100
I CEO
500
A
°
C
Coupler
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Collector emitter
saturation voltage
I F = 50 mA, I C = 2 mA
V CEsat
0.3
V
Cut-off frequency
V CE = 5 V, I F = 10 mA,
R L = 100
f c
110
kHz
Coupling capacitance
f = 1 MHz
C k
1
pF
Current Tran sfer Ratio (CTR)
Parameter
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
I C /I F
V CE = 10 V, I F = 10 mA 4N25(G)V
CTR
0.20
1
C F
CE
F
4N35(G)V
CTR
1.00
1.5
V CE = 10 V, I F = 10 mA,
T amb = 100
4N35(G)V
CTR
0.40
°
C
Rev. A4, 11–Jan–99
3 (10)
11073410.013.png 11073410.014.png 11073410.015.png
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I si
130
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T amb
3
25
°
C
P si
265
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V IOTM
6
kV
Safety temperature
T si
150
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Partial discharge test voltage –
Routine test
100%, t test = 1 s
V pd
1.6
kV
Partial discharge test voltage – t Tr = 60 s, t test = 10 s,
V IOTM
6
kV
Tr test
(see figure 2)
Lot test (sample test)
V pd
1.3
kV
Insulation resistance
V IO = 500 V
R IO
10 12
V IO = 500 V,
T amb = 100
R IO
10 11
°
C
V IO = 500 V,
T amb = 150
R IO
10 9
C
(construction test only)
°
300
V IOTM
V
t 1 , t 2 = 1 to 10 s
t 3 , t 4 = 1 s
t test
250
Phototransistor
Psi ( mW )
= 10 s
t stres
= 12 s
200
150
V Pd
V IOWM
V IORM
100
50
IR-Diode
Isi ( mA )
0
0
t 3
t test
t stres
t 4
0
25
50
75
100
125
150
t 1
t Tr
= 60 s
t 2
94 9182
T si – Safety Temperature ( °C )
13930
t
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
4 (10)
Rev. A4, 11–Jan–99
11073410.016.png 11073410.017.png 11073410.018.png 11073410.019.png 11073410.020.png
4N25(G)V/ 4N35(G)V Series
Vishay Semiconductors
Switching Characteristics of 4N25(G)V
Parameter
Test Conditions
Symbol
Typ.
Unit
Delay time
V S = 5 V, I C = 5 mA, R L = 100 (see figure 3)
t d
4.0
s
Rise time
S
C
L
t r
7.0
s
Fall time
t f
6.7
s
Storage time
t s
0.3
s
Turn-on time
t on
11.0
s
Turn-off time
t off
7.0
s
Turn-on time
V S = 5 V, I F = 10 mA, R L = 1 k (see figure 4)
t on
25.0
s
S
F
L
(
g
)
Turn-off time
t off
42.5
s
Switching Characteristics of 4N35(G)V
Parameter
Test Conditions
Symbol
Typ.
Unit
Delay time
V S = 5 V, I C = 2 mA, R L = 100 (see figure 3)
t d
2.5
s
S
C
L
Rise time
t r
3.0
s
Fall time
t f
4.2
s
Storage time
t s
0.3
s
Turn-on time
t on
<10.0
s
Turn-off time
t off
<10.0
s
Turn-on time
V S = 5 V, I F = 10 mA, R L = 1 k (see figure 4)
t on
9.0
s
Turn-off time
S
F
L
t off
25.0
s
I F
I F
+ 5 V
0
I C = 5 mA/ 2 mA;
Adjusted through
input amplitude
R G = 50
96 11698
I F
t p
T 0.01
t p = 50 s
0
t
t p
Channel I
Oscilloscope
R L . 1 M
C L 3 20 pF
Channel II
I C
50
100
100%
90%
14950
Figure 3. Test circuit, non-saturated operation
I F
I F = 10 mA
+ 5 V
0
I C
10%
0
t
R G = 50
t r
t p
T 0.01
t d
t s
t f
t p = 50 s
Channel I
t on
t off
Oscilloscope
t p
pulse duration
t s
storage time
Channel II
t d
delay time
t f
fall time
R L
.
1 M
t r
rise time
t off (= t s + t f )
turn-off time
50
1 k
3
C L
20 pF
t on (= t d + t r )
turn-on time
95 10844
Figure 4. Test circuit, saturated operation
Figure 5. Switching times
Rev. A4, 11–Jan–99
5 (10)
11073410.021.png 11073410.022.png 11073410.023.png 11073410.024.png 11073410.025.png

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