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BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
Rev. 05 — 21 January 2005
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors.
Table 1: Product overview
Type number
Package
PNP complement
Philips
JEITA
BC817
SOT23
-
BC807
BC817W
SOT323
SC-70
BC807W
BC337 [1]
SOT54 (TO-92)
SC-43A
BC327
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 ).
1.2 Features
n
High current
n
Low voltage
1.3 Applications
n
General-purpose switching and amplification
1.4 Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V CEO
collector-emitter voltage
open base;
I C =10mA
-
-
45
V
I C
collector current (DC)
-
-
500 mA
I CM
peak collector current
-
-
1
A
h FE
DC current gain
I C = 100 mA;
V CE =1V
[1] -
-
-
BC817; BC817W; BC337
100 -
600
BC817-16; BC817-16W; BC337-16
100 -
250
BC817-25; BC817-25W; BC337-25
160 -
400
BC817-40; BC817-40W; BC337-40
250 -
600
[1] Pulse test: t p £
300
m
s;
d £
0.02.
66556204.024.png 66556204.025.png 66556204.026.png 66556204.027.png 66556204.001.png 66556204.002.png
 
Philips Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
2. Pinning information
Table 3: Pinning
Pin
Description
Simplified outline Symbol
SOT23
1
base
2
emitter
3
3
3
collector
1
2
1
2
sym021
SOT23
SOT323
1
base
2
emitter
3
3
3
collector
1
2
1
2
sot323_so
sym021
SOT54
1
emitter
2
base
3
3
collector
1
2
3
2
1
001aab347
sym026
SOT54A
1
emitter
2
base
3
3
collector
1
2
3
2
1
001aab348
sym026
SOT54 variant
1
emitter
2
base
3
3
collector
1
2
3
2
1
001aab447
sym026
9397 750 14022
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 21 January 2005
2 of 19
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Philips Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
3. Ordering information
Table 4: Ordering information
Type number [1] Package
Name
Description
Version
BC817
-
plastic surface mounted package; 3 leads
SOT23
BC817W
SC-70
plastic surface mounted package; 3 leads
SOT323
BC337 [2]
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9 ).
4. Marking
Table 5: Marking codes
Type number
Marking code [1]
BC817
6D*
BC817-16
6A*
BC817-25
6B*
BC817-40
6C*
BC817W
6D*
BC817-16W
6A*
BC817-25W
6B*
BC817-40W
6C*
BC337
C337
BC337-16
C33716
BC337-25
C33725
BC337-40
C33740
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
9397 750 14022
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 21 January 2005
3 of 19
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Philips Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V CBO
collector-base voltage
open emitter
-
50
V
V CEO
collector-emitter voltage
open base;
I C =10mA
-
45
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
500
mA
I CM
peak collector current
-
1
A
I BM
peak base current
-
200
mA
P tot
total power dissipation
BC817
T amb £
25
°
C
[1] [2] -
250
mW
BC817W
T amb £
25
°
C
[1] [2] -
200
mW
BC337
T amb £
25
°
C
[1] [2] -
625
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
ambient temperature
-
65
+150
°
C
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Conditions
Min Typ
Max Unit
R th(j-a)
thermal resistance from
junction to ambient
BC817
T amb £
25
°
C
[1] [2] -
-
500
K/W
BC817W
T amb £
25
°
C
[1] [2] -
-
625
K/W
BC337
T amb £
25
°
C
[1] [2] -
-
200
K/W
[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
[2] Valid for all available selection groups.
9397 750 14022
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 21 January 2005
4 of 19
66556204.017.png 66556204.018.png 66556204.019.png 66556204.020.png
 
Philips Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8: Characteristics
T amb = 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
I CBO
collector-base cut-off current
I E = 0 A; V CB = 20 V
-
-
100
nA
I E = 0 A; V CB = 20 V;
T j = 150
-
-
5
m
A
°
C
I EBO
emitter-base cut-off current
I C = 0 A; V EB = 5 V
-
-
100
nA
h FE
DC current gain
I C = 100 mA; V CE = 1 V
[1]
BC817; BC817W; BC337
100
-
600
BC817-16; BC817-16W;
BC337-16
100
-
250
BC817-25; BC817-25W;
BC337-25
160
-
400
BC817-40; BC817-40W;
BC337-40
250
-
600
h FE
DC current gain
I C = 500 mA; V CE = 1 V
[1] 40
-
-
V CEsat
collector-emitter saturation
voltage
I C = 500 mA; I B = 50 mA
[1] -
-
700
mV
V BE
base-emitter voltage
I C = 500 mA; V CE = 1 V
[2] -
-
1.2
V
C c
collector capacitance
I E = i e = 0 A; V CB = 10 V;
f=1MHz
-
3
-
pF
f T
transition frequency
I C = 10 mA; V CE = 5 V;
f = 100 MHz
100
-
-
MHz
0.02.
[2] V BE decreases by approximately 2 mV/K with increasing temperature.
300
m
s;
d £
9397 750 14022
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 05 — 21 January 2005
5 of 19
[1] Pulse test: t p £
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