BTA151_SERIES_1.pdf

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Philips Semiconductors
Product specification
sensitive gate
BTA151 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose
BTA151- 500R 650R 800R
switching and phase control
V DRM ,
Repetitive peak off-state
500
650
800
V
applications.
V RRM
voltages
I T(AV)
Average on-state current
7.5
7.5
7.5
A
I T(RMS)
RMS on-state current
12
12
12
A
I TSM
Non-repetitive peak on-state
100
100
100
A
current
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
a
k
2
anode
3
gate
g
tab anode
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -650R -800R
V DRM , V RRM Repetitive peak off-state
-
500 1
650 1
800
V
voltages
I T(AV)
Average on-state current half sine wave; T mb
£
109 ˚C
-
7.5
A
I T(RMS)
RMS on-state current
all conduction angles
-
12
A
I TSM
Non-repetitive peak
half sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 10 ms
-
100
A
t = 8.3 ms
-
110
A
I 2 t
I 2 t for fusing
t = 10 ms
-
50
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 20 A; I G = 50 mA;
-
50
A/
m
s
on-state current after
dI G /dt = 50 mA/
m
s
triggering
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
V RGM
Peak reverse gate voltage
-
12
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
s.
September 1997
1
Rev 1.200
Thyristors
22887528.004.png
Philips Semiconductors
Product specification
sensitive gate
BTA151 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-mb
Thermal resistance
-
-
1.3
K/W
junction to mounting base
R th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
-
2
4
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
-
10
40
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
7
16
mA
V T
On-state voltage
I T = 23 A
-
1.4
1.75
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.6
1.5
V
V D = V DRM(max) ; I T = 0.1 A; T j = 125 ˚C
0.25
0.4
-
V
I D , I R
Off-state leakage current V D = V DRM(max) ; V R = V RRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V D = 67% V DRM(max) ; T j = 125 ˚C;
Gate open circuit
50
130
-
V/
m
s
R GK = 100
W
200 1000
-
V/
m
s
t gt
Gate controlled turn-on
I TM = 40 A; V D = V DRM ; I G = 0.1 A;
-
2
-
m
s
time
dI G /dt = 5 A/
m
s
t q
Circuit commutated
V D = 67% V DRM(max) ; I TM = 20 A; V R = 25 V;
-
70
-
m
s
turn-off time
dI TM /dt = 30 A/
m
s; dV D /dt = 50 V/
m
s;
R GK = 100
W
September 1997
2
Rev 1.200
Thyristors
off-state voltage
exponential waveform
22887528.005.png
Philips Semiconductors
Product specification
sensitive gate
BTA151 series
15
Ptot / W
BT151
Tmb(max) / C
105.5
120
ITSM / A
BT151
conduction
angle
form
factor
I
T
I TSM
a = 1.57
degrees
30
60
90
120
180
a
100
4
2.8
2.2
1.9
1.57
1.9
T
time
2.2
10
112
80
Tj initial = 25 C max
2.8
4
60
5
118.5
40
20
0
0
1
2
3
4
5
6
7
8
125
0
1
10
100
1000
IT(AV) / A
Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, P tot , versus
average on-state current, I T(AV) , where
a = form factor = I T(RMS) / I T(AV) .
Fig.4. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
ITSM / A
BT151
25
IT(RMS) / A
BT151
20
dI /dt limit
T
15
100
10
I TSM
I
T
T
time
5
Tj initial = 25 C max
10
10us
100us
1ms
10ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T mb
£
109˚C.
15
IT(RMS) / A
BT151
VGT(Tj)
VGT(25 C)
BT151
1.6
109 C
1.4
10
1.2
1
5
0.8
0.6
-50
0
50
100
150
0.4
-50
0
50
100
150
Tmb / C
Tj / C
Fig.3. Maximum permissible rms current I T(RMS) ,
versus mounting base temperature T mb .
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
September 1997
3
Rev 1.200
Thyristors
0
0
22887528.006.png 22887528.007.png
Philips Semiconductors
Product specification
sensitive gate
BTA151 series
IGT(Tj)
IGT(25 C)
30
IT / A
Tj = 125 C
Tj = 25 C
BT151
BT151
3
25
2.5
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
20
2
1.5
15
1
10
0.5
5
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-mb (K/W)
BT151
BT145
3
2.5
1
2
1.5
0.1
1
P
t p
0.01
0.5
t
0
-50
0
50
100
150
0.001
10us
0.1ms
1ms
10ms
0.1s
1s
10s
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-mb , versus
pulse width t p .
IH(Tj)
IH(25 C)
10000
dVD/dt (V/us)
BT151
3
2.5
2
1000
1.5
RGK = 100 Ohms
1
100
gate open circuit
0.5
-50
0
50
100
150
10
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
September 1997
4
Rev 1.200
Thyristors
D
0
22887528.001.png
Philips Semiconductors
Product specification
sensitive gate
BTA151 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
mounting
base
2.8
2.3
7.8
max
3.75
3.1
2.5
11.1
max
1)
2.54
max
1.2
15.3
min
1 23
4.58
0.5
2.29
1) Lead dimensions within this
zone uncontrolled.
0.88
max
Fig.13. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
Thyristors
22887528.002.png 22887528.003.png

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