BT137X_SERIES_D_1.pdf

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Philips Semiconductors
Product specification
logic level
BT137X series D
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. UNIT
triacs in a full pack plastic envelope,
intended for use in general purpose
BT137X-
500D 600D
bidirectional switching and phase
V DRM
Repetitive peak off-state voltages
500
600
V
control applications. These devices
I T(RMS)
RMS on-state current
8
8
A
are intended to be interfaced directly
I TSM
Non-repetitive peak on-state current
65
65
A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
case isolated
12 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V DRM
Repetitive peak off-state
-
500 1
600 1
V
voltages
I T(RMS)
RMS on-state current
full sine wave; T hs
£
73 ˚C
-
8
A
I TSM
Non-repetitive peak
full sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
71
A
I 2 t
I 2 t for fusing
t = 10 ms
-
21
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 12 A; I G = 0.2 A;
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
m
s.
September 1997
1
Rev 1.200
Triacs
22887054.004.png
Philips Semiconductors
Product specification
logic level
BT137X series D
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
-
4.5
K/W
without heatsink compound
-
-
6.5
K/W
R th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
T2+ G+
-
2.5
5
mA
T2+ G-
-
3.5
5
mA
T2- G-
-
3.5
5
mA
T2- G+
-
6.5
10
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
1.6
15
mA
T2+ G-
-
8.5
20
mA
T2- G-
-
1.2
15
mA
T2- G+
-
2.5
20
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
1.5
10
mA
V T
On-state voltage
I T = 10 A
-
1.3
1.65
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A; T j = 125 ˚C
0.25
0.4
-
V
I D
Off-state leakage current V D = V DRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
5
-
V/
m
s
off-state voltage
exponential waveform; R GK = 1 k
W
t gt
Gate controlled turn-on
I TM = 12 A; V D = V DRM(max) ; I G = 0.1 A;
-
2
-
m
s
time
dI G /dt = 5 A/
m
s
September 1997
2
Rev 1.200
Triacs
22887054.005.png
Philips Semiconductors
Product specification
logic level
BT137X series D
12
Ptot / W
BT137
Ths(max) / C
10
IT(RMS) / A
BT137X
71
= 180
120
90
10
80
8
73 C
1
8
60
30
89
6
6
98
4
4
107
2
116
2
0
0
2
4
6
8
10
125
-50
0
50
100
150
IT(RMS) / A
Ths / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus heatsink temperature T hs .
ITSM / A
BT137
IT(RMS) / A
BT137
1000
25
I TSM
I
T
time
20
Tj initial = 25 C max
15
100
dI /dt limit
T
10
T2- G+ quadrant
5
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T hs
£
73˚C.
80
ITSM / A
BT137
VGT(Tj)
VGT(25 C)
BT136
1.6
I TSM
70
I
T
60
T
time
1.4
50
Tj initial = 25 C max
1.2
40
1
30
0.8
20
10
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
September 1997
3
Rev 1.200
Triacs
0
BT137
10
0
1
22887054.006.png
Philips Semiconductors
Product specification
logic level
BT137X series D
IGT(Tj)
IGT(25 C)
IT / A
Tj = 125 C
Tj = 25 C
BT137
3
BT137D
25
T2+ G+
T2+ G-
T2- G-
T2- G+
20
typ
max
2.5
Vo = 1.264 V
Rs = 0.0378 Ohms
2
15
1.5
10
1
0.5
5
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-hs (K/W)
BT137
TRIAC
3
with heatsink compound
without heatsink compound
2.5
1
unidirectional
2
bidirectional
1.5
1
0.1
P
t p
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-hs , versus
pulse width t p .
IH(Tj)
IH(25C)
1000
dVD/dt (V/us)
TRIAC
3
2.5
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
September 1997
4
Rev 1.200
Triacs
D
22887054.007.png
Philips Semiconductors
Product specification
logic level
BT137X series D
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
max.
19
max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
123
0.4
M
1.0 (2x)
0.6
0.9
0.7
2.54
0.5
5.08
2.5
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997
5
Rev 1.200
Triacs
22887054.001.png 22887054.002.png 22887054.003.png

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