BT134W_SERIES_D_1.pdf

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22886841 UNPDF
Philips Semiconductors
Product specification
logic level
BT134W series D
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate triacs
SYMBOL PARAMETER
MAX. MAX. UNIT
in a plastic envelope suitable for
surface mounting, intended for use in
BT134W- 500D 600D
general
purpose
bidirectional
V DRM
Repetitive peak off-state voltages
500
600
V
switching and phase control
I T(RMS)
RMS on-state current
1
1
A
applications. These devices are
I TSM
Non-repetitive peak on-state current
10
10
A
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
4
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
tab main terminal 2
1
2
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V DRM
Repetitive peak off-state
-
500 1
600 1
V
voltages
I T(RMS)
RMS on-state current
full sine wave; T sp
£
108 ˚C
-
1
A
I TSM
Non-repetitive peak
full sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
10
A
t = 16.7 ms
-
11
A
I 2 t
I 2 t for fusing
t = 10 ms
-
0.5
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 1.5 A; I G = 0.2 A;
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
m
s.
August 1997
1
Rev 1.200
Triacs
22886841.004.png
Philips Semiconductors
Product specification
logic level
BT134W series D
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-sp
Thermal resistance
full or half cycle
-
-
15
K/W
junction to solder point
R th j-a
Thermal resistance
pcb mounted; minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted; pad area as in fig:14
-
70
-
K/W
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
T2+ G+
-
2.0
5
mA
T2+ G-
-
2.5
5
mA
T2- G-
-
2.5
5
mA
T2- G+
-
5.0
10
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
1.6
10
mA
T2+ G-
-
4.5
15
mA
T2- G-
-
1.2
10
mA
T2- G+
-
2.2
15
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
1.2
10
mA
V T
On-state voltage
I T = 2 A
-
1.2
1.5
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A; T j = 125 ˚C
0.25
0.4
-
V
I D
Off-state leakage current V D = V DRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of change of V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
5
-
V/
m
s
off-state voltage
exponential waveform; R GK = 1 k
W
t gt
Gate controlled turn-on
I TM = 1.5 A; V D = V DRM(max) ; I G = 0.1 A;
-
2
-
m
s
time
dI G /dt = 5 A/
m
s
August 1997
2
Rev 1.200
Triacs
22886841.005.png
Philips Semiconductors
Product specification
logic level
BT134W series D
1.4
Ptot / W
BT134W
Tsp(max) / C
104
1.2
IT(RMS) / A
BT134W
1.2
107
1
108 C
= 180
120
90
60
30
1
1
110
0.8
0.8
113
0.6
0.6
116
0.4
119
0.4
0.2
122
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
125
-50
0
50
100
150
IT(RMS) / A
Tsp / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus solder point temperature T sp .
1000
ITSM / A
BT134W
2
IT(RMS) / A
BT134W
I TSM
I
T
T
time
1.5
100
Tj initial = 25 C max
dI /dt limit
T
1
T2- G+ quadrant
10
0.5
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T sp
£
108˚C.
12
ITSM / A
BT134W
VGT(Tj)
VGT(25 C)
BT136
1.6
I TSM
10
I
T
1.4
T
time
8
Tj initial = 25 C max
1.2
6
1
4
0.8
2
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
August 1997
3
Rev 1.200
Triacs
0
1
0
22886841.006.png
Philips Semiconductors
Product specification
logic level
BT134W series D
IGT(Tj)
IGT(25 C)
2
IT / A
Tj = 125 C
BT134W
BT136D
3
T2+ G+
T2+ G-
T2- G-
T2- G+
Tj = 25 C
2.5
1.5
Vo = 1.0 V
Rs = 0.21 Ohms
2
typ
1.5
1
max
1
0.5
0.5
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
100
Zth j-sp (K/W)
BT134W
TRIAC
3
2.5
10
2
unidirectional
1
bidirectional
1.5
P
t p
1
D
0.1
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-sp , versus
pulse width t p .
IH(Tj)
IH(25C)
1000
dVD/dt (V/us)
TRIAC
3
2.5
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
August 1997
4
Rev 1.200
Triacs
22886841.007.png 22886841.001.png
Philips Semiconductors
Product specification
logic level
BT134W series D
MOUNTING INSTRUCTIONS
Dimensions in mm.
3.8
min
1.5
min
1.5
min
(3x)
2.3
6.3
1.5
min
4.6
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
9
4.6
4.5
10
7
15
50
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35
m thick).
August 1997
5
Rev 1.200
Triacs
m
22886841.002.png 22886841.003.png

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