BUK7506-55A_1.pdf

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Philips Semiconductors
Product specification
TrenchMOS
Ô
transistor
BUK7506-55A
Standard level FET
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL PARAMETER
MAX.
UNIT
standard level field-effect power
transistor in a plastic envelope using
V DS
Drain-source voltage
55
V
’ trench ’ technology which features
I D
Drain current (DC)
75
A
very low on-state resistance. It is
P tot
Total power dissipation
230
W
intended for use in automotive and
T j
Junction temperature
175
˚C
general
purpose
switching
R DS(ON)
Drain-source on-state
6.3
m
W
applications.
resistance
V GS = 10 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
d
tab
1
gate
2
drain
3
source
g
tab drain
123
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V DS
Drain-source voltage
-
-
55
V
V DGR
Drain-gate voltage
R GS = 20 k
W
-
55
V
±
V GS
Gate-source voltage
-
-
20
V
I D
Drain current (DC)
T mb = 25 ˚C
-
75
A
I D
Drain current (DC)
T mb = 100 ˚C
-
75
A
I DM
Drain current (pulse peak value)
T mb = 25 ˚C
-
240
A
P tot
Total power dissipation
T mb = 25 ˚C
-
230
W
T stg , T j
Storage & operating temperature
-
- 55
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R th j-mb
Thermal resistance junction to
-
-
0.65
K/W
mounting base
R th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient
December 1998
1
Rev 1.100
22889565.004.png
Philips Semiconductors
Product specification
TrenchMOS
Ô
transistor
BUK7506-55A
Standard level FET
STATIC CHARACTERISTICS
T j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)DSS
Drain-source breakdown
V GS = 0 V; I D = 0.25 mA;
55
-
-
V
voltage
T j = -55˚C
50
-
-
V
V GS(TO)
Gate threshold voltage
V DS = V GS ; I D = 1 mA
2
3.0
4.0
V
T j = 175˚C
1
-
-
V
T j = -55˚C
-
-
4.4
V
I DSS
Zero gate voltage drain current V DS = 55 V; V GS = 0 V;
-
0.05
10
m
A
T j = 175˚C
-
-
500
m
A
I GSS
Gate source leakage current
V GS =
±
20 V; V DS = 0 V
-
2
100
nA
R DS(ON)
Drain-source on-state
V GS = 10 V; I D = 25 A
-
5.3
6.3
m
W
resistance
T j = 175˚C
-
-
13.2
m
W
DYNAMIC CHARACTERISTICS
T mb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
C iss
Input capacitance
V GS = 0 V; V DS = 25 V; f = 1 MHz
-
4500 6000
pF
C oss
Output capacitance
-
1000 1200
pF
C rss
Feedback capacitance
-
620
820
pF
t d on
Turn-on delay time
V DD = 30 V; R load =1.2
W
;
-
35
55
ns
t r
Turn-on rise time
V GS = 10 V; R G = 10
W
-
115
175
ns
t d off
Turn-off delay time
-
155
230
ns
t f
Turn-off fall time
-
110
155
ns
L d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I DR
Continuous reverse drain
-
-
75
A
current
I DRM
Pulsed reverse drain current
-
-
240
A
V SD
Diode forward voltage
I F = 25 A; V GS = 0 V
-
0.85
1.2
V
I F = 75 A; V GS = 0 V
-
1.1
-
V
t rr
Reverse recovery time
I F = 75 A; -dI F /dt = 100 A/
m
s;
-
80
-
ns
Q rr
Reverse recovery charge
V GS = -10 V; V R = 30 V
-
0.2
-
m
C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
W DSS
Drain-source non-repetitive
I D = 75 A; V DD
£
25 V;
-
-
500
mJ
unclamped inductive turn-off
V GS = 10 V; R GS = 50
W
; T mb = 25 ˚C
energy
December 1998
2
Rev 1.100
22889565.005.png
Philips Semiconductors
Product specification
TrenchMOS
Ô
transistor
BUK7506-55A
Standard level FET
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
1
Zth / (K/W)
D =
0.5
0.1
0.2
0.1
0.05
0.02
P
t p
D =
t p
D
T
0.01
T
t
0
0
20 40 60 80 100 120 140 160 180
Tmb / C
0.001
0.00001
0.001
t/S
0.1
10
Fig.1. Normalised power dissipation.
PD% = 100
×
P D /P D 25 ˚C = f(T mb )
Fig.4. Transient thermal impedance.
Z th j-mb = f(t); parameter D = t p /T
ID%
Normalised Current Derating
400
ID/A
120
110
100
90
80
70
60
50
40
30
20
10
0
20
10.0
VGAS/V=
14
9.0
12
8.5
8.0
300
7.5
7.0
200
6.5
6.0
100
5.5
5.0
4.5
0
0
20 40 60 80 100 120 140 160 180
Tmb / C
0
2
4
6
8
10
VDS/V
Fig.2. Normalised continuous drain current.
ID% = 100
I D /I D 25 ˚C = f(T mb ); conditions: V GS
³
5 V
Fig.5. Typical output characteristics, T j = 25 ˚C.
I D = f(V DS ); parameter V GS
1000
11 RDS(ON)/mOhm
VGS/V =
10
ID/A
tp =
RDS(ON) = VDS/ID
10uS
9
100
100uS
8
5.5
1mS
7
6.0
6.5
7.0
8.0
10.0
DC
10mS
10
6
100mS
5
1
4
1
10
VDS/V
100
0
20
40
ID/A
60
80
100
Fig.3. Safe operating area. T mb = 25 ˚C
I D & I DM = f(V DS ); I DM single pulse; parameter t p
Fig.6. Typical on-state resistance, T j = 25 ˚C.
R DS(ON) = f(I D ); parameter V GS
December 1998
3
Rev 1.100
×
22889565.006.png 22889565.007.png 22889565.001.png
Philips Semiconductors
Product specification
TrenchMOS
Ô
transistor
BUK7506-55A
Standard level FET
8.5 RDS(ON)/mOhm
2.5
Rds(on) normlised to 25degC
BUK959-60
8
7.5
2
7
6.5
1.5
6
5.5
1
5
4.5
0.5
4
5
10
VGS/V
15
20
-100
-50
0
Tmb / degC
50
100
150
200
Fig.7. Typical on-state resistance, T j = 25 ˚C.
R DS(ON) = f(V GS ); conditions I D = 25 A;
Fig.10. Normalised drain-source on-state resistance.
a = R DS(ON) /R DS(ON)25 ˚C = f(T j ); I D = 25 A; V GS = 5 V
100
ID/A
5
VGS(TO) / V
BUK759-60
max.
80
4
typ.
60
3
min.
40
2
Tj/C =
175
25
20
1
-100
-50
0
50
100
150
200
0
0
1
2
3
4
5
6
7
VGS/V
Tj / C
Fig.8. Typical transfer characteristics.
I D = f(V GS ) ; conditions: V DS = 25 V; parameter T j
Fig.11. Gate threshold voltage.
V GS(TO) = f(T j ); conditions: I D = 1 mA; V DS = V GS
90
gfs/S
1E-01
Sub-Threshold Conduction
80
70
1E-02
60
50
1E-03
2%
typ
98%
40
30
1E-04
20
1E-05
10
0
1E-06
0
20
40
ID/A
60
80
100
0
1
2
3
4
5
Fig.9. Typical transconductance, T j = 25 ˚C.
g fs = f(I D ); conditions: V DS = 25 V
Fig.12. Sub-threshold drain current.
I D = f(V GS) ; conditions: T j = 25 ˚C; V DS = V GS
December 1998
4
Rev 1.100
0
22889565.002.png
Philips Semiconductors
Product specification
TrenchMOS
Ô
transistor
BUK7506-55A
Standard level FET
10
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
9
8
7
6
5
4
Ciss
3
2
1
Coss
Crss
20
40
60
80
100 120 140 160 180
Tmb / C
0
0.01
0.1
1
VDS/V
10
100
Fig.13. Typical capacitances, C iss , C oss , C rss .
C = f(V DS ); conditions: V GS = 0 V; f = 1 MHz
Fig.16. Normalised avalanche energy rating.
W DSS % = f(T mb ); conditions: I D = 75 A
12
VGS/V
+
VDD
10
L
8
VDS = 14V
44V
VDS
-
6
VGS
-ID/10 0
4
0
T.U.T.
2
RGS
R 01
shunt
0
0
20
40
60
80
100
120
140
QG/nC
Fig.14. Typical turn-on gate-charge characteristics.
V GS = f(Q G ); conditions: I D = 50 A; parameter V DS
Fig.17. Avalanche energy test circuit.
W DSS =
0.5
×
LI 2
×
BV DSS /(
BV DSS -
V DD )
100
IF/A
+
VDD
80
RD
60
VDS
-
Tj/C =
175
25
VGS
40
RG
0
T.U.T.
20
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
VSDS/V
Fig.15. Typical reverse diode current.
I F = f(V SDS ); conditions: V GS = 0 V; parameter T j
Fig.18. Switching test circuit.
December 1998
5
Rev 1.100
22889565.003.png

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