BUK444-800A-B_1.pdf

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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
SYMBOL PARAMETER
MAX.
MAX.
UNIT
field-effect power transistor in a
plastic full-pack envelope.
BUK444
-800A -800B
The device is intended for use in
V DS
Drain-source voltage
800
800
V
Switched Mode Power Supplies
I D
Drain current (DC)
1.4
1.2
A
(SMPS), motor control, welding,
P tot
Total power dissipation
30
30
W
DC/DC and AC/DC converters, and
R DS(ON)
Drain-source on-state
6.0
8.0
W
in general purpose switching
resistance
applications.
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
d
1
gate
2
drain
3
source
g
case isolated
12 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V DS
Drain-source voltage
-
-
800
V
V DGR
Drain-gate voltage
R GS = 20 k
W
-
800
V
±
V GS
Gate-source voltage
-
-
30
V
-800A
-800B
I D
Drain current (DC)
T hs = 25 ˚C
-
1.4
1.2
A
I D
Drain current (DC)
T hs = 100 ˚C
-
0.9
0.75
A
I DM
Drain current (pulse peak value) T hs = 25 ˚C
-
5.6
4.8
A
P tot
Total power dissipation
T hs = 25 ˚C
-
30
W
T stg
Storage temperature
-
- 55
150
˚C
T j
Junction Temperature
-
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction to with heatsink compound
-
-
4.17 K/W
heatsink
R th j-a
Thermal resistance junction to
-
55
-
K/W
ambient
April 1993
1
Rev 1.100
22889654.010.png 22889654.011.png 22889654.012.png 22889654.013.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
STATIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V (BR)DSS
Drain-source breakdown
V GS = 0 V; I D = 0.25 mA
800
-
-
V
voltage
V GS(TO)
Gate threshold voltage
V DS = V GS ; I D = 1 mA
2.1
3.0
4.0
V
I DSS
Zero gate voltage drain current V DS = 800 V; V GS = 0 V; T j = 25 ˚C
-
2
20
A
m
I DSS
Zero gate voltage drain current V DS = 800 V; V GS = 0 V; T j =125 ˚C
-
0.1
1.0
mA
I GSS
Gate source leakage current
V GS =
±
30 V; V DS = 0 V
-
10
100
nA
R DS(ON)
Drain-source on-state
V GS = 10 V;
BUK444-800A
-
5.0
6.0
W
resistance
I D = 1.0 A
BUK444-800B
-
6.0
8.0
W
DYNAMIC CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
g fs
Forward transconductance
V DS = 25 V; I D = 1.0 A
1.0
2.3
-
S
C iss
Input capacitance
V GS = 0 V; V DS = 25 V; f = 1 MHz
-
450
750
pF
C oss
Output capacitance
-
42
70
pF
C rss
Feedback capacitance
-
15
30
pF
t d on
Turn-on delay time
V DD = 30 V; I D = 1.9 A;
-
15
20
ns
t r
Turn-on rise time
V GS = 10 V; R GS = 50
W
;
-
25
40
ns
t d off
Turn-off delay time
R gen = 50
W
-
50
65
ns
t f
Turn-off fall time
-
30
40
ns
L d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
Repetitive peak voltage from all R.H.
£
65% ; clean and dustfree
-
1500
V
three terminals to external
heatsink
C isol
Capacitance from T2 to external f = 1 MHz
-
12
-
pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I DR
Continuous reverse drain
-
-
-
1.4
A
current
I DRM
Pulsed reverse drain current
-
-
-
5.6
A
V SD
Diode forward voltage
I F = 1.4 A ; V GS = 0 V
-
1.0
1.3
V
t rr
Reverse recovery time
I F = 1.4 A; -dI F /dt = 100 A/
m
s;
-
230
-
ns
Q rr
Reverse recovery charge
V GS = 0 V; V R = 100 V
-
1.9
-
m
C
April 1993
2
Rev 1.100
22889654.001.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
PD%
Normalised Power Derating
Zth / (K/W)
BUKx44-hv
120
110
100
90
80
70
60
50
40
30
20
10
0
10
with heatsink compound
D =
0.5
1
0.2
0.1
0.05
0.1
0.02
P
t p
D =
T
0
T
t
0.01
0
20
40
60
80
100 120 140
1E-07
1E-05
1E-03
1E-01
1E+01
Ths / C
t / s
Fig.1. Normalised power dissipation.
PD% = 100
×
P D /P D 25 ˚C = f(T hs )
Fig.4. Transient thermal impedance.
Z th j-hs = f(t); parameter D = t p /T
ID%
Normalised Current Derating
ID / A
BUK454-800A
120
110
100
90
80
70
60
50
40
30
20
10
0
4
with heatsink compound
10
6
3
5
4.8
2
4.6
1
4.4
4.2
4
0
20
40
60
80
100 120 140
0
0
4
8
12
16
20
24
28
Ths / C
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100
×
I D /I D 25 ˚C = f(T hs ); conditions: V GS
³
10 V
Fig.5. Typical output characteristics, T j = 25 ˚C.
I D = f(V DS ); parameter V GS
ID / A
BUK444-800A,B
RDS(ON) / Ohm
BUK454-800A
10
20
A
B
4 4.2 4.4
tp = 10 us
4.6
15
VGS / V =
1
100 us
1 ms
10 ms
100 ms
4.8
10
5
6
DC
0.1
10
5
0.01
10
100
1000
0
0
1
2
3
4
VDS / V
ID / A
Fig.3. Safe operating area. T hs = 25 ˚C
I D & I DM = f(V DS ); I DM single pulse; parameter t p
Fig.6. Typical on-state resistance, T j = 25 ˚C.
R DS(ON) = f(I D ); parameter V GS
April 1993
3
Rev 1.100
D
t p
22889654.002.png 22889654.003.png 22889654.004.png 22889654.005.png 22889654.006.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
ID / A
BUK454-800A
VGS(TO) / V
4
max.
4
Tj / C =
25
3
typ.
3
2
150
min.
2
1
1
0
0
0
2
4
6
8
10
-60 -40 -20 0
20 40 60 80 100 120 140
Tj / C
VGS / V
Fig.7. Typical transfer characteristics.
I D = f(V GS ) ; conditions: V DS = 25 V; parameter T j
Fig.10. Gate threshold voltage.
V GS(TO) = f(T j ); conditions: I D = 1 mA; V DS = V GS
gfs / S
BUK454-800A
ID / A
SUB-THRESHOLD CONDUCTION
3
1E-01
1E-02
2
1E-03
2 %
typ
98 %
1E-04
1
1E-05
0
1E-06
0
1
2
3
4
0
1
2
3
4
ID / A
VGS / V
Fig.8. Typical transconductance, T j = 25 ˚C.
g fs = f(I D ); conditions: V DS = 25 V
Fig.11. Sub-threshold drain current.
I D = f(V GS) ; conditions: T j = 25 ˚C; V DS = V GS
a
Normalised RDS(ON) = f(Tj)
10000
C / pF
BUK4y4-800
2
1000
Ciss
1
100
Coss
0
10
Crss
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
0
20
40
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = R DS(ON) /R DS(ON)25 ˚C = f(T j ); I D = 1.0 A; V GS = 10 V
Fig.12. Typical capacitances, C iss , C oss , C rss .
C = f(V DS ); conditions: V GS = 0 V; f = 1 MHz
April 1993
4
Rev 1.100
22889654.007.png 22889654.008.png
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK444-800A/B
12
VGS / V
BUK454-800
6
IF / A
BUK454-800A
10
VDS / V =160
5
Tj / C = 150
25
640
8
4
6
3
4
2
2
1
0
0
2
4
6
8 10 12 14 16 18 20
QG / nC
0
0
1
2
VSDS / V
Fig.13. Typical turn-on gate-charge characteristics.
V GS = f(Q G ); conditions: I D = 2.4 A; parameter V DS
Fig.14. Typical reverse diode current.
I F = f(V SDS ); conditions: V GS = 0 V; parameter T j
April 1993
5
Rev 1.100
22889654.009.png

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