BC880.PDF

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D186

BC876; BC878; BC880

PNP Darlington transistors

Product specication

Supersedes data of 1997 Apr 02

File under Discrete Semiconductors, SC04

1997 Apr 22

Philips Semiconductors

Product specication

PNP Darlington transistors

BC876; BC878; BC880

FEATURES

PINNING

High DC current gain (min. 1000)

DESCRIPTION

High current (max. 1 A)

base

Low voltage (max. 80 V)

collector

Integrated diode and resistor.

emitter

APPLICATIONS

Relay drivers.

handbook, halfpage

DESCRIPTION

PNP Darlington transistor in a TO-92; SOT54 plastic

package. NPN complements: BC875, BC877 and BC879.

MAM306

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V CBO

collector-base voltage

open emitter

BC876

BC878

- 80

BC880

100 V

V CES

collector-emitter voltage

V BE =0

BC876

BC878

- 60

BC880

I C

collector current (DC)

tot

total power dissipation

T amb £

0.83

h FE

DC current gain

I C = - 150 mA; V CE = - 10 V

1000

f T

transition frequency

I C =

0.5 A; V CE =

5 V; f = 100 MHz

200

MHz

1997 Apr 22

Philips Semiconductors

Product specication

PNP Darlington transistors

BC876; BC878; BC880

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V CBO

collector-base voltage

open emitter

BC876

BC878

- 80

BC880

100

V CES

collector-emitter voltage

V BE =0

BC876

BC878

- 60

BC880

V EBO

emitter-base voltage

open collector

I C

collector current (DC)

I CM

peak collector current

- 2

I B

base current (DC)

200

P tot

total power dissipation

T amb £

C; note 1

0.83

T stg

storage temperature

+150

T j

junction temperature

150

° C

T amb

operating ambient temperature

+150

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-a

thermal resistance from junction to ambient note 1

150

K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

1997 Apr 22

Philips Semiconductors

Product specication

PNP Darlington transistors

BC876; BC878; BC880

CHARACTERISTICS

T j =25 ° C unless otherwise specied.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I CES

collector cut-off current

BC875

V BE = 0; V CE = - 45 V

- 50

BC877

V BE = 0; V CE =

60 V

BC879

V BE = 0; V CE =

80 V

I EBO

emitter cut-off current

I C = 0; V EB =

h FE

DC current gain

I C = - 150 mA; V CE = - 10 V; see Fig.2 1000

I C =

0.5 A; V CE =

10 V; see Fig.2

2000

V CEsat

collector-emitter saturation voltage I C =

0.5 A; I B =

0.5 mA

1.3 V

I C =

1 A; I B =

1mA

1.8 V

V BEsat

base-emitter saturation voltage

I C = - 1 A; I B = - 1mA

- 2.2 V

f T

transition frequency

I C =

0.5 A; V CE =

5 V; f = 100 MHz

200

MHz

Switching times (between 10% and 90% levels)

t on

turn-on time

I Con = - 500 mA; I Bon = - 0.5 mA;

I Boff = 0.5 mA

500

t off

turn-off time

700

MGD839

6000

handbook, full pagewidth

h FE

5000

4000

3000

2000

1000

- 10 - 1

- 1

- 10

- 10 2

- 10 3

I C (mA)

V CE =

10 V.

Fig.2 DC current gain; typical values.

1997 Apr 22

Philips Semiconductors

Product specication

PNP Darlington transistors

BC876; BC878; BC880

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

e 1

b 1

L 1

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

b 1

0.66

0.56

e 1

L 1 (1)

5.2

5.0

0.48

0.40

0.45

0.40

4.8

4.4

1.7

1.4

4.2

3.6

2.54

1.27

14.5

12.7

2.5

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE

VERSION

REFERENCES

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

SOT54

TO-92

SC-43

97-02-28

1997 Apr 22

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