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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC876; BC878; BC880
PNP Darlington transistors
Product specication
Supersedes data of 1997 Apr 02
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
Product specication
PNP Darlington transistors
BC876; BC878; BC880
FEATURES
PINNING
·
High DC current gain (min. 1000)
PIN
DESCRIPTION
·
High current (max. 1 A)
1
base
·
Low voltage (max. 80 V)
2
collector
·
Integrated diode and resistor.
3
emitter
APPLICATIONS
·
Relay drivers.
handbook, halfpage
2
DESCRIPTION
PNP Darlington transistor in a TO-92; SOT54 plastic
package. NPN complements: BC875, BC877 and BC879.
1
2
3
1
MAM306
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage
open emitter
BC876
-
-
-
60
V
BC878
-
-
-
80
V
BC880
-
-
-
100 V
V
CES
collector-emitter voltage
V
BE
=0
BC876
-
-
-
45
V
BC878
-
-
-
60
V
BC880
-
-
-
80
V
I
C
collector current (DC)
-
-
-
1
A
tot
total power dissipation
T
amb
£
25
°
C
-
-
0.83
W
h
FE
DC current gain
I
C
=
-
150 mA; V
CE
=
-
10 V
1000
-
-
f
T
transition frequency
I
C
=
-
0.5 A; V
CE
=
-
5 V; f = 100 MHz
-
200
-
MHz
1997 Apr 22
2
Philips Semiconductors
Product specication
PNP Darlington transistors
BC876; BC878; BC880
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC876
-
-
60
V
BC878
-
-
80
V
BC880
-
-
100
V
V
CES
collector-emitter voltage
V
BE
=0
BC876
-
-
45
V
BC878
-
-
60
V
BC880
-
-
80
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
2
A
I
B
base current (DC)
-
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
0.83
W
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient note 1
150
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Apr 22
3
Philips Semiconductors
Product specication
PNP Darlington transistors
BC876; BC878; BC880
CHARACTERISTICS
T
j
=25
°
C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CES
collector cut-off current
BC875
V
BE
= 0; V
CE
=
-
45 V
-
-
-
50
nA
BC877
V
BE
= 0; V
CE
=
-
60 V
-
-
-
50
nA
BC879
V
BE
= 0; V
CE
=
-
80 V
-
-
-
50
nA
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
4V
-
-
-
50
nA
h
FE
DC current gain
I
C
=
-
150 mA; V
CE
=
-
10 V; see Fig.2 1000
-
-
I
C
=
-
0.5 A; V
CE
=
-
10 V; see Fig.2
2000
-
-
V
CEsat
collector-emitter saturation voltage I
C
=
-
0.5 A; I
B
=
-
0.5 mA
-
-
-
1.3 V
I
C
=
-
1 A; I
B
=
-
1mA
-
-
-
1.8 V
V
BEsat
base-emitter saturation voltage
I
C
=
-
1 A; I
B
=
-
1mA
-
-
-
2.2 V
f
T
transition frequency
I
C
=
-
0.5 A; V
CE
=
-
5 V; f = 100 MHz
-
200
-
MHz
Switching times (between 10% and 90% levels)
t
on
turn-on time
I
Con
=
-
500 mA; I
Bon
=
-
0.5 mA;
I
Boff
= 0.5 mA
-
-
500
ns
t
off
turn-off time
-
-
700
ns
MGD839
6000
handbook, full pagewidth
h
FE
5000
4000
3000
2000
1000
0
-
10
-
1
-
1
-
10
-
10
2
-
10
3
I
C
(mA)
V
CE
=
-
10 V.
Fig.2 DC current gain; typical values.
1997 Apr 22
4
Philips Semiconductors
Product specication
PNP Darlington transistors
BC876; BC878; BC880
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
D
e
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
1
0.66
0.56
c
D
d
E
e
e
1
L
L
1
(1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1997 Apr 22
5
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