BC818.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BC817W; BC818W
NPN general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 05
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC817W; BC818W
FEATURES
PINNING
·
High current (max. 500 mA)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
base
2
emitter
APPLICATIONS
3
collector
·
General purpose switching and amplification.
DESCRIPTION
3
handbook, halfpage
NPN transistor in a SOT323 plastic package.
PNP complements: BC807W and BC808W.
3
MARKING
1
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
2
1
2
BC817W
6Dt
BC818W
6Ht
Top view
MAM062
BC817-16W
6At
BC818-16W
6Et
BC817-25W
6Bt
BC818-25W
6Ft
Fig.1 Simplified outline (SOT323) and symbol.
BC817-40W
6Ct
BC818-40W
6Gt
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC817W
-
50
V
BC818W
-
30
V
V CEO
collector-emitter voltage
open base
BC817W
-
45
V
BC818W
-
25
V
I CM
peak collector current
-
1
A
P tot
total power dissipation
T amb £ 25 ° C
-
200
mW
h FE
DC current gain
I C = 100 mA; V CE = 1 V
100
600
I C = 500 mA; V CE =1V
40
-
f T
transition frequency
I C = 10 mA; V CE = 5 V; f = 100 MHz
100
-
MHz
1997 Mar 05
2
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC817W; BC818W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC817W
-
50
V
BC818W
-
30
V
V CEO
collector-emitter voltage
open base; I C =10mA
BC817W
-
45
V
BC818W
-
25
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
500
mA
I CM
peak collector current
-
1
A
I BM
peak base current
-
200
mA
P tot
total power dissipation
T amb £ 25 ° C; note 1
-
200
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
625
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Mar 05
3
11066900.003.png
Philips Semiconductors
Product specification
NPN general purpose transistors
BC817W; BC818W
CHARACTERISTICS
T amb =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I CBO
collector cut-off current
I E = 0; V CB =20V
-
100
nA
I E = 0; V CB = 20 V; T j = 150 ° C
-
5
m A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
100
nA
h FE
DC current gain
I C = 100 mA; V CE = 1 V; note 1;
see Figs 2, 3 and 4
BC817W; BC818W
100
600
BC817-16W; BC818-16W
100
250
BC817-25W; BC818-25W
160
400
BC817-40W; BC818-40W
250
600
h FE
DC current gain
I C = 500 mA; V CE = 1 V; note 1
40
-
V CEsat
collector-emitter saturation voltage I C = 500 mA; I B = 50 mA; note 1
-
700
mV
V BE
base-emitter voltage
I C = 500 mA; V CE = 1 V; note 1
-
1.2
mV
C c
collector capacitance
I E =i e = 0; V CB =10V; f=1MHz
-
5
pF
f T
transition frequency
I C = 10 mA; V CE = 5 V; f = 100 MHz 100
-
MHz
Note
1. Pulse test: t p £
300
m
s;
d£
0.02.
MBH721
20
handbook, full pagewidth
h FE
160
V CE = 5 V
120
80
40
0
10 - 1
10 2
10 3
1
10
I C (mA)
BC817-16W; BC818-16W .
Fig.2 DC current gain; typical values.
1997 Mar 05
4
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC817W; BC818W
MBH720
500
handbook, full pagewidth
h FE
400
V CE = 1 V
300
200
100
10 - 1
10 2
10 3
1
10
I C (mA)
BC817-25W; BC818-25W .
Fig.3 DC current gain; typical values.
MBH722
500
handbook, full pagewidth
h FE
400
V CE = 5 V
300
200
100
0
10 - 1
1
10
10 2
10 3
I C (mA)
BC817-40W; BC818-40W .
Fig.4 DC current gain; typical values.
1997 Mar 05
5
0
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