BC328.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC327; BC327A; BC328
PNP general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Mar 10
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Philips Semiconductors
Product specification
PNP general purpose transistors
BC327; BC327A;
BC328
FEATURES
PINNING
·
High current (max. 500 mA)
PIN
DESCRIPTION
·
Low voltage (max. 60 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
General purpose switching and amplification,
e.g. driver and output stages of audio amplifiers.
DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC337, BC337A and BC338.
handbook, halfpag 1
2
3
3
2
MAM281
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC327
-
-
50
V
BC327A
-
- 60
V
BC328
-
-
30
V
V CEO
collector-emitter voltage
open base
BC327
-
-
45
V
BC327A
-
- 60
V
BC328
-
-
25
V
I CM
peak collector current
-
-
1
A
P tot
total power dissipation
T amb £
25
°
C
-
625
mW
h FE
DC current gain
I C = - 100 mA; V CE = - 1V
BC327; BC328
100
600
BC327A
100
400
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz
80
-
MHz
1997 Mar 10
2
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Philips Semiconductors
Product specification
PNP general purpose transistors
BC327; BC327A; BC328
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC327
-
-
50
V
BC327A
-
- 60
V
BC328
-
-
30
V
V CEO
collector-emitter voltage
open base
BC327
-
-
45
V
BC327A
-
- 60
V
BC328
-
-
25
V
V EBO
emitter-base voltage
open collector
-
-
5
V
I C
collector current (DC)
-
-
500
mA
I CM
peak collector current
-
- 1
A
I BM
peak base current
-
-
200
mA
P tot
total power dissipation
T amb £
25
°
C; note 1
-
625
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
0.2
K/mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Mar 10
3
11067661.003.png
Philips Semiconductors
Product specification
PNP general purpose transistors
BC327; BC327A; BC328
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
20 V
-
-
-
100 nA
I E = 0; V CB = - 20 V; T j = 150 ° C
-
-
- 5
m A
I EBO
emitter cut-off current
I C = 0; V EB =
-
5V
-
-
-
100 nA
h FE
DC current gain
I C =
-
100 mA; V CE =
-
1V;
see Figs 2, 3 and 4
BC327; BC328
100
-
600
BC327A
100
-
400
BC327-16; BC328-16
100
-
250
BC327-25; BC328-25
160
-
400
BC327-40; BC328-40
250
-
600
h FE
DC current gain
I C = - 500 mA; V CE = - 1V;
see Figs 2, 3 and 4
40
-
-
V CEsat
collector-emitter saturation voltage I C =
-
500 mA; I B =
-
50 mA
-
-
-
700 mV
V BE
base-emitter voltage
I C =
-
500 mA; V CE =
-
1 V; note 1
-
-
-
1.2 V
C c
collector capacitance
I E =i e = 0; V CB = - 10 V; f = 1 MHz
-
10
-
pF
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz 80
-
-
MHz
Note
1. V BE decreases by about
-
2 mV/K with increasing temperature.
MBH717
250
handbook, full pagewidth
h FE
200
V CE = 5 V
150
100
50
0
10 - 1
10 2
10 3
1
10
I C (mA)
BC327-16; BC328-16.
Fig.2 DC current gain; typical values.
1997 Mar 10
4
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Philips Semiconductors
Product specification
PNP general purpose transistors
BC327; BC327A; BC328
MBH718
500
handbook, full pagewidth
h FE
400
V CE = 5 V
300
200
100
0
10 - 1
10 2
10 3
1
10
I C (mA)
BC337-25; BC3378-25.
Fig.3 DC current gain; typical values.
MBH719
500
handbook, full pagewidth
h FE
400
V CE = 5 V
300
200
100
10 - 1
10 2
10 3
1
10
I C (mA)
BC327-40; BC328-40.
Fig.4 DC current gain; typical values.
1997 Mar 10
5
0
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