BT136X_SERIES_1.pdf

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Philips Semiconductors
Product specification
Triacs
BT136X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a full pack
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
plastic envelope, intended for use in
applications
requiring
high
BT136X- 500
600
800
bidirectional transient and blocking
BT136X- 500F 600F 800F
voltage capability and high thermal
BT136X- 500G 600G 800G
cycling
performance.
Typical
V DRM
Repetitive peak off-state
500
600
800
V
applications include motor control,
voltages
industrial and domestic lighting,
I T(RMS)
RMS on-state current
4
4
4
A
heating and static switching.
I TSM
Non-repetitive peak on-state
25
25
25
A
current
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
case
1
main terminal 1
T2
T1
2
main terminal 2
3
gate
case isolated
12 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500 -600 -800
V DRM
Repetitive peak off-state
-
500 1
600 1
800
V
voltages
I T(RMS)
RMS on-state current
full sine wave; T hs
£
92 ˚C
-
4
A
I TSM
Non-repetitive peak
full sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I 2 t
I 2 t for fusing
t = 10 ms
-
3.1
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 6 A; I G = 0.2 A;
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
m
s.
October 1997
1
Rev 1.200
22886939.003.png
Philips Semiconductors
Product specification
Triacs
BT136X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
£
65% ; clean and dustfree
C isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance
full or half cycle
junction to heatsink
with heatsink compound
-
-
5.5
K/W
without heatsink compound
-
-
7.2
K/W
R th j-a
Thermal resistance
in free air
-
55
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT136X-
...
...F
...G
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
11
35
25
50
mA
T2- G+
-
30
70
70
100
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
7
20
20
30
mA
T2+ G-
-
16
30
30
45
mA
T2- G-
-
5
20
20
30
mA
T2- G+
-
7
30
30
45
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
5
15
15
30
mA
V T
On-state voltage
I T = 5 A
-
1.4
1.70
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A;
0.25
0.4
-
V
T j = 125 ˚C
I D
Off-state leakage current V D = V DRM(max) ;
-
0.1
0.5
mA
T j = 125 ˚C
October 1997
2
Rev 1.200
22886939.004.png 22886939.005.png
Philips Semiconductors
Product specification
Triacs
BT136X series
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT136X-
...
...F
...G
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ;
100
50
200
250
-
V/
m
s
off-state voltage
T j = 125 ˚C; exponential
waveform; gate open
circuit
dV com /dt
Critical rate of change of V DM = 400 V; T j = 95 ˚C;
-
-
10
50
-
V/
m
s
commutating voltage
I T(RMS) = 4 A;
dI com /dt = 1.8 A/ms; gate
open circuit
t gt
Gate controlled turn-on
I TM = 6 A; V D = V DRM(max) ;
-
-
-
2
-
m
s
time
I G = 0.1 A; dI G /dt = 5 A/
m
s
October 1997
3
Rev 1.200
22886939.006.png
Philips Semiconductors
Product specification
Triacs
BT136X series
Ptot / W
BT136
Ths(max) / C
5
IT(RMS) / A
BT136X
8
81
7
86.5
92 C
4
= 180
120
90
60
30
6
92
1
5
97.5
3
4
103
3
108.5
2
2
114
1
1
119.5
0
0
1
2
3
4
125
-50
0
50
100
150
IT(RMS) / A
Ths / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus heatsink temperature T hs .
1000
ITSM / A
BT136
12
IT(RMS) / A
BT136
I
T
I TSM
10
T
time
Tj initial = 25 C max
8
100
6
dI /dt limit
T
4
T2- G+ quadrant
2
10
0
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T hs
£
92˚C.
30
ITSM / A
BT136
VGT(Tj)
VGT(25 C)
BT136
1.6
I
T
I TSM
25
1.4
T
time
20
Tj initial = 25 C max
1.2
15
1
10
0.8
5
0.6
0
1
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
October 1997
4
Rev 1.200
5
0
22886939.001.png
Philips Semiconductors
Product specification
Triacs
BT136X series
IGT(Tj)
IGT(25 C)
12
IT / A
Tj = 125 C
Tj = 25 C
BT136
BT136
3
T2+ G+
T2+ G-
T2- G-
T2- G+
10
typ
max
2.5
Vo = 1.27 V
Rs = 0.091 ohms
8
2
1.5
6
1
4
0.5
2
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
10
Zth j-hs (K/W)
BT136
TRIAC
3
with heatsink compound
without heatsink compound
2.5
unidirectional
1
bidirectional
2
1.5
1
0.1
P
t p
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-hs , versus
pulse width t p .
IH(Tj)
IH(25C)
1000
dVcom/dt (V/us)
TRIAC
3
off-state dV/dt limit
BT136...G SERIES
2.5
BT136 SERIES
BT136...F SERIES
2
100
1.5
1
10
0.5
dIcom/dt = 5.1 3.9
3
2.3
1.8
1.4
A/ms
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI T /dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI T /dt.
October 1997
5
Rev 1.200
0
D
22886939.002.png

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