APM7318.pdf

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APM7318
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
20V/8A , R DS(ON) =15m
Ω
(typ.) @ V GS =4.5V
SO-8
R DS(ON) =30m
Ω
(typ.) @ V GS =2.5V
S1
1
8
D1
Super High Dense Cell Design for Extremely
Low R DS(ON)
•
G1
2
7
D1
Reliable and Rugged
•
S2
3
6
D2
SO-8 Package
G2
4
5
D2
Top View
Applications
D1 D1
D2 D2
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
G1
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
Ordering and Marking Information
APM7318
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
Handling Code
Temp. Range
°
Package Code
APM7318 K :
APM7318
XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
ANPEC Electronics Corp.
Rev. A.3 - May., 2003
1
www.anpec.com.tw
•
•
Copyright
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APM7318
Absolute Maximum Ratings (T A = 25 ° C unless otherwise noted)
Symbol
Parameter
Rating
Unit
V DSS
Drain-Source Voltage
20
V
V GSS
Gate-Source Voltage
±16
I D *
Maximum Drain Current – Continuous
8
A
I DM
Maximum Drain Current – Pulsed
24
P D
Maximum Power Dissipation
T A =25
°
C
2.5
W
T A =100
°
C
1.0
W
T J
Maximum Junction Temperature
150
°
C
T STG
Storage Temperature Range
-55 to 150
°
C
R
θ
jA
Thermal Resistance – Junction to Ambient
50
°
C/W
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
Symbol
Parameter
Test Condition
APM731 8
Unit
Min. Typ. Max.
Static
BV DSS
Drain-Source Breakdown
Voltage
V GS =0V , I DS =250
µ
A
20
V
I DSS
Zero Gate Voltage Drain
Current
V DS =18V , V GS =0V
1
µ
A
V GS(th) Gate Threshold Voltage
V DS =V GS , I DS =250
µ
A
0.7
0.9
1.5
V
I GSS
Gate Leakage Current
V GS =
±
16V , V DS =0V
±
100
nA
R DS(ON) a
Drain-Source On-state
Resistance
V GS =4.5V , I DS =8A
15
20
m
Ω
V GS =2.5V , I DS =2A
30
40
V SD a
Diode Forward Voltage
I SD =4A , V GS =0V
0.7
1.3
V
Dynamic b
Q g
Total Gate Charge
V DS =10V , I DS = 6A
V GS =4.5V
14
17
Q gs
Gate-Source Charge
5
nC
Q gd
Gate-Drain Charge
2.8
t d(ON)
Turn-on Delay Time
9
15
T r
Turn-on Rise Time
V DD =10V , I DS =2A ,
V GEN =4.5V , R G =0.2
14
20
ns
t d(OFF)
Turn-off Delay Time
Ω
30
43
T f
Turn-off Fall Time
16
24
C iss
Input Capacitance
V GS =0V
V DS =15V
Frequency=1.0MHz
1220
C oss
Output Capacitance
335
pF
C rss
Reverse Transfer Capacitance
215
%
b : Guaranteed by design, not subject to production testing
≤
300
µ
s, duty cycle
≤
2
ANPEC Electronics Corp.
Rev. A.3 - May., 2003
2
www.anpec.com.tw
Notes
a : Pulse test ; pulse width
Copyright
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APM7318
Typical Characteristics
Output Characteristics
Transfer Characteristics
30
30
V GS =3,4,5,6,7,8,9,10V
25
25
20
20
V GS =2.5V
15
15
10
10
V GS =2V
T J =25
°
C
T J =-55
°
C
5
5
T J =125
°
C
0
01234567890
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V DS -Drain-to-Source Voltage (V)
V GS -Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
0.05
I DS =250
µ
A
1.25
0.04
1.00
V GS =2.5V
0.03
0.75
0.02
V GS =4.5V
0.50
0.25
0.01
0.00
-50 -25 0
25 50 75 100 125 150
0.00
0
2
4
6
8
10
T j -Junction Temperature (
°
C)
I DS -Drain Current (A)
ANPEC Electronics Corp.
Rev. A.3 - May., 2003
3
www.anpec.com.tw
Copyright
323061412.035.png
APM7318
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
On-Resistaence vs. Junction Temperature
0.08
2.00
I DS =8A
V GS =4.5V
I DS =8A
0.07
1.75
0.06
1.50
0.05
1.25
0.04
1.00
0.03
0.75
0.02
0.50
0.01
0.25
0.00
1234567890
0.00
-50 -25 0
25 50 75 100 125 150
Gate Voltage (V)
T j -Junction Temperature (
°
C)
Gate Charge
Capacitance Characteristics
10
1800
V DS =10V
I DS =6A
Frequency=1MHz
1500
8
Ciss
1200
6
900
4
600
Coss
2
300
Crss
0
0
5
10
15
20
25
30
0
0
5
10
15
20
Q G -Total Gate Charge (nC)
V DS -Drain-to-Source Voltage (V)
ANPEC Electronics Corp.
Rev. A.3 - May., 2003
4
www.anpec.com.tw
Copyright
323061412.036.png
APM7318
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
30
80
10
70
60
50
T J =150
°
C
T J =25
°
C
40
1
30
20
10
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
0.01
0.1
1
10
30
V SD -Source to Drain Voltage
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R thJA =50°C/W
3.T JM -T A =P DM Z thJA
4.Surface Mounted
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
ANPEC Electronics Corp.
Rev. A.3 - May., 2003
5
www.anpec.com.tw
Copyright
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