AF4825P.pdf

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P-Channel 30-V (D-S) MOSFET
AF4825P
Features
General Description
-Low r DS(on) Provides Higher Efficiency and Extends
Battery Life
-Miniature SO-8 Surface Mount Package Saves
Board Space
-High power and current handling capability
-Extended V GS range (±25) for battery pack
applications
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWM DC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
Product Summary
V DS (V)
r DS(on) (mΩ)
I D (A)
-30
13@V GS =-10V
-11.5
19@V GS =-4.5V
-9.3
Pin Assignments
Pin Descriptions
S
1
8
D
Pin Name
Description
S
Source
S
2
7
D
G
Gate
S
3
6
D
D
Drain
G
4
5
D
SOP-8
Ordering information
A X 4825P X X X
Feature
PN
Package
Lead Free
Blank : Normal
L : Lead Free Package
Packing
F :MOSFET
S: SOP-8
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
1/5
Rev. 1.1 Oct 15, 2004
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P-Channel 30-V (D-S) MOSFET
AF4825P
Absolute Maximum Ratings (T A =25ºC unless otherwise noted)
Symbol
Parameter
Rating
Units
V DS
Drain-Source Voltage
-30
V
V GS
Gate-Source Voltage
±25
V
I D
Continuous Drain Current (Note 1) T A =70ºC
T A =25ºC
-11.5
A
-9.3
I DM
Pulsed Drain Current (Note 2)
±50
A
I S
Continuous Source Current (Diode Conduction) (Note 1)
-2.1
A
T A =25ºC
3.1
P D
Power Dissipation (Note 1)
W
T A =70ºC
2.3
T J , T STG Operating Junction and Storage Temperature Range
-55 to 150
ºC
Thermal Resistance Ratings
Symbol
Parameter
Maximum
Units
R θJC
Maximum Junction-to-Case (Note 1)
t < 5 sec
25
ºC/W
R θJA
Maximum Junction-to-Ambient (Note 1)
t < 5 sec
50
ºC/W
Note 1: surface Mounted on 1”x 1” FR4 Board.
Note 2: Pulse width limited by maximum junction temperature
Specifications (T A =25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
Limits
Unit
Min.
Typ. Max.
Static
V (BR)DSS Drain-Source breakdown Voltage
V GS =0V, I D =-250uA
-30
-
-
V
V GS(th) Gate-Threshold Voltage
V DS = V GS , I D =-250uA
-1
-1.6
-3
V
I GSS
Gate-Body Leakage
V DS =0V, V GS =±25V
-
-
±100
nA
V DS =-24V, V GS =0V
-
-
-1
I DSS
Zero Gate Voltage Drain Current
V DS =-24V, V GS =0V,
T J =55ºC
uA
-
-
-5
I D(on)
On-State Drain Current (Note 3)
V DS =-5V, V GS =-10V
-50
-
-
A
V GS =-10V, I D =-11.5A
-
10
13
r DS(on) Drain-Source On-Resistance (Note 3)
V GS =-4.5V, I D =-9.3A
-
15
19.0
mΩ
V GS =-10V, I D =-13A,
T J =55ºC
-
11
13
g fs
Forward Transconductance (Note 3) V GS =-15V, I D =-11.5A
-
29
-
S
V SD
Diode Forward Voltage
I S =2.5A, V GS =0V
-
-0.8
-1.2
V
Dynamic (Note 4)
Q g
Total Gate Charge
V DS =-15V, V GS =-10V,
I D =-11.5A
-
64
100
Q gs
Gate-Source Charge
-
11
-
nC
Q gd
Gate-Drain Charge
-
17
-
Switching
t d(on)
Turn-On Delay Time
-
15
25
t r
Rise Time
V DD =-15, R L =6Ω,
I D =-1A, V GEN =-10V
-
13
20
nS
t d(off)
Turn-Off Delay Time
-
100
152
t f
Fall-Time
-
54
81
Note 3: Pulse test: PW < 300us duty cycle < 2%.
Note 4: Guaranteed by design, not subject to production testing.
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Oct 15, 2004
2/5
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P-Channel 30-V (D-S) MOSFET
AF4825P
Typical Performance Characteristics
I D =11.5A
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Oct 15, 2004
3/5
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P-Channel 30-V (D-S) MOSFET
AF4825P
Typical Performance Characteristics (Continued)
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Oct 15, 2004
4/5
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P-Channel 30-V (D-S) MOSFET
AF4825P
Marking Information
SOP-8L
( Top View )
8
Logo
"X": Non-Lead Free; "X": Lead Free
"A~Z": 01~26;
"A~Z": 27~52
Part Number
4 8 2 5 P
AA Y W X
Week code:
"A~Z": 01~26;
"A~Z": 27~52
1
Year code:
"4" =2004
Factory code
Package Information
Package Type: SOP-8L
L
VIEW "A "
D
0.015x45
7 (4X)
7 (4X)
e
B
VIEW "A"
y
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
1.40
1.60
1.75
0.055
0.063
0.069
A1
0.10
-
0.25
0.040
-
0.100
A2
1.30
1.45
1.50
0.051
0.057
0.059
B
0.33
0.41
0.51
0.013
0.016
0.020
C
0.19
0.20
0.25
0.0075
0.008
0.010
D
4.80
5.05
5.30
0.189
0.199
0.209
E
3.70
3.90
4.10
0.146
0.154
0.161
e
-
1.27
-
-
0.050
-
H
5.79
5.99
6.20
0.228
0.236
0.244
L
0.38
0.71
1.27
0.015
0.028
0.050
y
-
-
0.10
-
-
0.004
θ
0 O
-
8 O
0 O
-
8 O
Anachip Corp.
www.anachip.com.tw Rev. 1.1 Oct 15, 2004
5/5
Lot code:
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