STP3NA60.pdf
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STP3NA60
STP3NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
V
DSS
R
DS(on)
I
D
STP3NA60
STP3NA60FI
600 V
600 V
< 4
W
2.9 A
2.1 A
< 4
W
n
TYPICAL R
DS(on)
= 3.3
W
n
±
30V GATE TO SOURCE VOLTAGE RATING
n
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
n
3
LOW INTRINSIC CAPACITANCES
3
n
2
2
GATE GHARGE MINIMIZED
1
1
n
n
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITCH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP3NA60
STP3NA60FI
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
W
)
600
V
V
GS
Gate-source Voltage
±
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
2.9
2.1
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
1.8
1.3
A
I
DM
(
·
) Drain Current (pulsed)
11.6
11.6
A
P
tot
Total Dissipation at T
c
= 25
o
C
80
40
W
Derating Factor
0.64
0.32
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
¾
2000
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
·
) Pulse width limited by safe operating area
November 1996
1/10
(
STP3NA60/FI
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case Max
1.56
3.12
o
C/W
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
2.9
A
d
< 1%)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
42
mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
1.6
mJ
d
< 1%)
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
o
C, pulse width limited by T
j
max,
1.8
A
d
< 1%)
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
m
A V
GS
= 0
600
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 T
c
= 125
o
C
25
250
A
m
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
m
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V I
D
= 1.5 A
3.3
4
W
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
2.9
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
*
)
rrd
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1.5 A
1
2
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0
380
57
17
500
75
23
pF
pF
pF
2/10
m
STP3NA60/FI
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
GS
= 10 V
(see test circuit, figure 3)
W
14
25
20
35
ns
ns
(di/dt)
on
Turn-on Current Slope V
DD
= 400 V I
D
= 3 A
R
G
= 18
300
A/
m
s
V
GS
= 10 V
(see test circuit, figure 5)
W
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V I
D
= 3 A V
GS
= 10 V
22
6
9
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
GS
= 10 V
(see test circuit, figure 5)
W
13
24
12
18
34
17
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
·
)
Source-drain Current
Source-drain Current
(pulsed)
2.9
11.6
A
A
V
SD
(
*
) Forward On Voltage
I
SD
= 2.9 A V
GS
= 0
1.5
V
t
rr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
s
V
DD
= 100 V T
j
= 150
o
C
(see test circuit, figure 5)
m
460
ns
Q
rr
5.6
m
C
I
RRM
24
A
*
) Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
·
) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
Safe Operating Areas for ISOWATT220
3/10
V
DD
= 300 V I
D
= 1.5 A
R
G
= 18
V
DD
= 480 V I
D
= 3 A
R
G
= 18
I
SD
= 3 A di/dt = 100 A/
(
(
STP3NA60/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
STP3NA60/FI
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10
Plik z chomika:
kkxp1973
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