TIP 31x [B].pdf

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TIP31, TIP31A, TIP31B, TIP31C

NPN SILICON POWER TRANSISTORS

Designed for Complementary Use with the

TIP32 Series

●

TO-220 PACKAGE

(TOP VIEW)

40 W at 25°C Case Temperature

●

3 A Continuous Collector Current

●

B

1

5 A Peak Collector Current

●

C

2

Customer-Specified Selections Available

●

E

3

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIP31

TIP31A

TIP31B

TIP31C

80

100

120

140

Collector-base voltage (I E = 0)

V CBO

V

TIP31

TIP31A

TIP31B

TIP31C

40

60

80

100

Collector-emitter voltage (I B = 0)

V CEO

V

Emitter-base voltage

V EBO

5

V

Continuous collector current

I C

3

A

Peak collector current (see Note 1)

I CM

5

A

Continuous base current

I B

1

A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

P tot

40

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

P tot

2

W

Unclamped inductive load energy (see Note 4)

½LI C 2

32

mJ

Operating junction temperature range

T j

-65 to +150

°C

Storage temperature range

T stg

-65 to +150

°C

Lead temperature 3.2 mm from case for 10 seconds

T L

250

°C

NOTES: 1.

This value applies for t p

≤

0.3 ms, duty cycle

≤

10%.

2.

Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.

3.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4.

This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I B(on) = 0.4 A, R BE = 100

Ω

,

V BE(off) = 0, R S = 0.1

Ω

, V CC = 20 V.

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

1

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TIP31, TIP31A, TIP31B, TIP31C

NPN SILICON POWER TRANSISTORS

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

TIP31

TIP31A

TIP31B

TIP31C

40

60

80

100

Collector-emitter

breakdown voltage

V (BR)CEO

I C = 30 mA

(see Note 5)

I B = 0

V

V CE = 80 V

V CE =100 V

V CE =120 V

V CE =140 V

V BE =0

V BE =0

V BE =0

V BE =0

TIP31

TIP31A

TIP31B

TIP31C

0.2

0.2

0.2

0.2

Collector-emitter

cut-off current

I CES

mA

Collector cut-off

current

V CE = 30 V

V CE = 60 V

I B =0

I B =0

TIP31/31A

TIP31B/31C

0.3

0.3

I CEO

mA

Emitter cut-off

current

I EBO

V EB = 5 V

I C =0

1

mA

Forward current

transfer ratio

V CE = 4 V

V CE = 4 V

I C = 1 A

I C = 3A

25

10

h FE

(see Notes 5 and 6)

50

Collector-emitter

saturation voltage

V CE(sat)

I B = 375 mA

I C = 3 A

(see Notes 5 and 6)

1.2

V

Base-emitter

voltage

V BE

V CE = 4 V

I C = 3 A

(see Notes 5 and 6)

1.8

V

Small signal forward

current transfer ratio

h fe

V CE = 10 V

I C = 0.5 A

f = 1 kHz

20

Small signal forward

current transfer ratio

|

h fe |

V CE = 10 V

I C = 0.5 A

f = 1 MHz

3

NOTES: 5.

These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle

≤

2%.

6.

These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

R

Junction to case thermal resistance

3.125

°C/W

θ

JC

R

θ

Junction to free air thermal resistance

62.5

°C/W

JA

resistive-load-switching characteristics at 25°C case temperature

TEST CONDITIONS †

PARAMETER

MIN

TYP

MAX

UNIT

t on

Tu r n - o n t i m e

I C = 1 A

V BE(off) = -4.3 V

I B(on) = 0.1 A

R L = 30

I B(off) = -0.1 A

t p = 20 µs, dc

0.5

µs

t off

Turn-off time

Ω

≤

2%

2

µs

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

2

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TIP31, TIP31A, TIP31B, TIP31C

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS631AA

TCS631AB

1000

10

V CE = 4 V

T C = 25°C

t p = 300 µs, duty cycle < 2%

1·0

100

0·1

I C = 100 mA

I C = 300 mA

I C = 1 A

I C = 3 A

10

0·01

0·001

0·01

0·1

1·0

10

0·1

1·0

10

100

1000

I C - Collector Current - A

I B - Base Current - mA

Figure 1.

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS631AC

1·0

V CE = 4 V

T C = 25°C

0·9

0·8

0·7

0·6

0·5

0·01

0·1

1·0

10

I C - Collector Current - A

Figure 3.

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

3

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TIP31, TIP31A, TIP31B, TIP31C

NPN SILICON POWER TRANSISTORS

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

SAS631AA

100

t p = 300 µs, d = 0.1 = 10%

t p = 1 ms, d = 0.1 = 10%

t p = 10 ms, d = 0.1 = 10%

DC Operation

10

1·0

0·1

TIP31

TIP31A

TIP31B

TIP31C

0·01

1·0

10

100

1000

V CE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

TIS631AA

50

40

30

20

10

0

0

25

50

75

100

125

150

T C - Case Temperature - °C

Figure 5.

JULY 1968 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

4

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