KSC5086.pdf

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KSC5086 NPN Triple Diffused Planar Silicon Transistor
KSC5086
HIgh Definition Color Display Horizontal
Deflection Output
(Damper Diode Built In)
• High Collector-Base Voltage : BV CBO = 1500V
• High Speed Switching : t F =0.1
Equivalent Circuit
C
s (Typ.)
B
TO-3PF
1.Base 2.Collector 3.Emitter
50
typ.
E
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T C =25 °
C unless otherwise noted
Symbol
Parameter
Value
Units
V CBO
Collector-Base Voltage
1500
V
V CEO
Collector-Emitter Voltage
800
V
V EBO
Emitter-Base Voltage
6
V
I C
Collector Current (DC)
7
A
I CP
Collector Current (Pulse)
16
A
P C
Collector Dissipation (T C =25
C)
50
W
T J
Junction Temperature
150
C
T STG
Storage Temperature
- 55 ~ 150
C
Electrical Characteristics T C =25 °
C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
I CES
Collector Cut-off Current (V BE =0)
V CE = 1400V, R BE = 0
1
mA
I CBO
Collector Cu-toff Current
V CB =800V, I E =0
10
A
I EBO
Emitter Cut-off Current
V EB = 4V, I C = 0
40
200
mA
V EBO
Base-Emitter Breakdown Voltage
I E = 250mA, I C = 0
6
V
h FE
DC Current Gain
V CE = 5V, I C = 1.0A
8
V CE (sat)
Collector-Emitter Saturation Voltage
I C = 5A, I B = 1.2A
5
V
V BE (sat)
Base-Emitter Saturation Voltage
I C = 5A, I B = 1.2A
1.5
V
V F
Damper Diode Turn On Voltage
I F = 6A
2
V
t F
Fall Time
V CC = 200V, I C = 4A
I B1 = 0.8A, I B2 = -1.6A
R L = 50
0.2
s
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1
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Typical Characteristics
10
100
I B = 2A
I B = 1.8A
I B = 1.6A
I B = 1.4A
I B = 1.2A
I B = 1A
V CE = 5V
8
6
20
I B = 800mA
I B = 600mA
10
4
I B = 400mA
5
I B = 200mA
2
I B = 0A
0
0
2
4
6
8
10
1
0.1
1
10
V CE [V], COLLECTOR-EMITTER VOLTAGE
I C [A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
V CE = 5V
9
8
7
1
6
5
4
I C /I B =5
0.1
3
I C /I B =3
2
1
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0.1
1
10
I C [A], COLLECTOR CURRENT
V BE [V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
100
RESISTIVE LOAD
V CC =200V
I C =4A
I B1 =0.8A
10
t stg
1
1
0.1
t f
SINGLE PULSE
T C =25 O C
0.01
0.1
1
10
100
1000
10000
-0.1
-1
-10
I B2 [A], BASE CURRENT
V CE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Typical Characteristics (Continued)
100
80
70
60
10
I B2 =-1A
CONSTANT
50
40
30
1
20
H
SINGLE PULSE
10
0.1
0
10
100
1000
10000
0
25
50
75
100
125
150
175
200
V CE [V], COLLECTOR-EMITTER VOLTAGE
T C [ o C], TEMPERATURE
Figure 1. Reverse Bias Safe Operating Area
Figure 2. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
I C =5I B1 = 5I B2
L=500
µ
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Package Demensions
TO-3PF
5.50 ±
0.20
15.50 ±
0.20
ø3.60 ±
0.20
3.00 ± 0.20
(1.50)
0.85 ±
0.03
2.00 ±
0.20
2.00 ±
0.20
2.00 ±
0.20
2.00 ±
0.20
4.00 ±
0.20
0.75 +0.20
–0.10
3.30 ±
0.20
5.45TYP
[5.45 ±
0.30 ]
5.45TYP
[5.45 ±
0.30 ]
0.90 +0.20
–0.10
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
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