BTA40AB.PDF

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STANDARD TRIACS
BTA40 A/B
STANDARD TRIACS
. HIGH SURGE CURRENT CAPABILITY
. BTA Family :
INSULATING VOLTAGE = 2500V (RMS)
(UL RECOGNIZED : E81734)
A 2
G
A 1
DESCRIPTION
The BTA40 A/B triac family are high performance
glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where high surge current capability is re-
quired. Application such as phase control and
static switching on inductive or resistive load.
RD91
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(360
Tc = 75
°
C
40
A
°
conduction angle)
I TSM
Non repetitive surge peak on-state current
( Tj initial = 25
tp = 8.3 ms
315
A
°
C)
tp = 10 ms
300
I 2 t
I 2 t value
tp = 10 ms
450
A 2 s
dI/dt
Critical rate of rise of on-state current
Gate supply : I G = 500mA di G /dt = 1A/
Repetitive
F = 50 Hz
10
A/
m
s
m
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°
C
°
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°
C
Symbol
Parameter
BTA40-... A/B
Unit
400
600
700
800
V DRM
V RRM
Repetitive peak off-state voltage
Tj = 125
400
600
700
800
V
°
C
March 1995
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FEATURES
. COMMUTATION : (dV/dt)c > 10V/ m s
11010968.002.png
BTA40 A/B
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-c) DC Junction to case for DC
1.2
°
C/W
Rth (j-c) AC Junction to case for 360
°
conduction angle ( F= 50 Hz)
0.9
°
C/W
GATE CHARACTERISTICS (maximum values)
P G (AV) =1W P GM = 40W (tp = 20
m
s)
I GM =8A(tp=20
m
s)
V GM = 16V (tp = 20
m
s).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
Unit
A
B
I GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-III
MAX
100
50
mA
IV
MAX
150
100
V GT
V D =12V (DC) R L =33
W
Tj=25
°
C
I-II-III-IV
MAX
1.5
V
V GD
V D =V DRM R L =3.3k
W
Tj=125
°
C
I-II-III-IV
MIN
0.2
V
tgt
V D =V DRM I G = 500mA
dI G /dt = 3A/
Tj=25
°
C
I-II-III-IV
TYP
2.5
m
s
m
s
I L
I G =1.2 I GT
Tj=25
°
C
I-III-IV
TYP
70
60
mA
II
200
180
I H *
I T = 500mA gate open
Tj=25
°
C
MAX
100
80
mA
V TM *
I TM = 60A tp= 380
m
s
Tj=25
°
C
MAX
1.8
V
I DRM
I RRM
V DRM Rated
V RRM Rated
Tj=25
°
C
MAX
0.01
mA
Tj=125
°
C
MAX
6
dV/dt *
Linear slope up to V D =67%V DRM
gate open
Tj=125
°
C
MIN
250
V/
m
s
(dV/dt)c * (dI/dt)c = 18A/ms
Tj=125
°
C
MIN
10
V/
m
s
* For either polarity of electrode A 2 voltage with reference to electrode A 1 .
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11010968.003.png
BTA40 A/B
ORDERING INFORMATION
Package
I T(RMS)
V DRM /V RRM
Sensitivity Specification
A
V
A
B
BTA
(Insulated)
40
400
X
X
600
X
X
700
X
X
800
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T amb
and T case ) for different thermal resistances heatsink +
contact.
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : relative variation of thermal impedance junction
to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1
0.1
tp (s )
0.01
1E-3
1E-2
1E-1
1E +0
1 E+1
3/5
11010968.004.png
BTA40 A/B
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
Fig.8 : On-state characteristics (maximum values).
3
10ms, and
corresponding value of I 2 t.
4/5
11010968.005.png
BTA40 A/B
PACKAGE MECHANICAL DATA
RD91 Plastic
L2
a2
LI
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
b2
A
40.00
1.575
d1
a1
29.90 30.30 1.177 1.193
C
a2
22.00
0.867
B
27.00
1.063
c2
c1
b1
13.50 16.50 0.531 0.650
a1
b2
24.00
0.945
C
14.00
0.551
N1
c1
3.50
0.138
N2
c2
1.95
3.00
0.077 0.118
E
0.70
0.90
0.027 0.035
F
B
F
4.00
4.50
0.157 0.177
I
11.20 13.60 0.441 0.535
L1
3.10
3.50
0.122 0.138
E
I
L2
1.70
1.90
0.067 0.075
N1
33
°
43
°
33
°
43
°
A
N2
28
°
38
°
28
°
38
°
Marking : type number
Weight : 20 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express writt en approval of SGS-THOMSON Microelectronics.
{
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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