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VISHAY
BYW32 to BYW36
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
\
Features
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
Applications
Fast rectification and switching diode for example for
TV-line output circuits and switch mode power supply
Mechanical Data
Case: Sintered glass case, SOD 57
949539
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 370 mg, (max. 500 mg)
Parts Table
Part
Type differentiation
Package
BYW32
V R = 200 V; I FAV = 2 A
SOD57
BYW33
V R = 300 V; I FAV = 2 A
SOD57
BYW34
V R = 400 V; I FAV = 2 A
SOD57
BYW35
V R = 500 V; I FAV = 2 A
SOD57
BYW36
V R = 600 V; I FAV = 2 A
SOD57
Absolute Maximum Ratings
T amb = 25 °C, unless otherwise specified
Parameter
Te s t c o n d i t i o n
Sub type Symbol Value
Unit
Reverse voltage = Repetitive peak reverse
voltage
see electrical characteristics
BYW32
V R =
V RRM
200
V
see electrical characteristics
BYW33
V R =
V RRM
300
V
see electrical characteristics
BYW34
V R =
V RRM
400
V
see electrical characteristics
BYW35
V R =
V RRM
500
V
see electrical characteristics
BYW36
V R =
V RRM
600
V
Peak forward surge current
t p = 10 ms, half sinewave
I FSM
50
A
Repetitive peak forward current
I FRM
12
A
Average forward current
ϕ = 180 °
I FAV
2
A
Junction and storage temperature range
T j = T stg - 55 to +
175
°C
Non repetitive reverse avalanche energy
I (BR)R = 0.4 A
E R
10
mJ
Document Number 86048
Rev. 5, 07-Jan-03
www.vishay.com
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BYW32 to BYW36
Vishay Semiconductors
VISHAY
Maximum Thermal Resistance
T amb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type
Symbol
Value
Unit
Junction ambient
l = 10 mm, T L = constant
R thJA
45
K/W
on PC board with spacing 25 mm
R thJA
100
K/W
Electrical Characteristics
T amb = 25 °C, unless otherwise specified
Parameter
Test condition
Sub type Symbol
Min
Ty p.
Max
Unit
Forward voltage
I F = 1 A
V F
0.95
1.1
V
Reverse current
V R = V RRM
I R
1
5 µ A
V R = V RRM , T j = 150 °C
I R
60
150
µ A
Reverse recovery time
I F = 0.5 A, I R = 1 A, i R = 0.25 A
t rr
200
ns
Typical Characteristics (T amb = 25 ° C unless otherwise specified)
120
2.5
100
V R =V RRM
half sinewave
2.0
80
R thJA =45K/W
l=10mm
60
1.5
l
l
40
1.0
20
0.5
R thJA =100K/W
PCB: d=25mm
0
T L =constant
0.0
0
5
10
15
20
25
30
0 20 40 60 80 100 120 140 160 180
T amb – Ambient Temperature (
94 9552
l – Lead Length ( mm )
16346
°
C )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100.000
1000
V R = V RRM
10.000
T j =175°C
100
1.000
T j =25°C
0.100
10
0.010
0.001
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
16345
V F – Forward Voltage ( V )
16347
T j – Junction Temperature ( °C )
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Reverse Current vs. Junction Temperature
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2
Document Number 86048
Rev. 5, 07-Jan-03
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VISHAY
BYW32 to BYW36
Vishay Semiconductors
300
40
V R = V RRM
35
f=1MHz
250
30
200
P R –Limit
@100%V R
25
150
20
100
P R –Limit
@80%V R
15
10
50
5
0
0
25
50
75
100
125
150
175
0.1
1.0
10.0
100.0
16348
T j – Junction Temperature (
°
C )
16349
V R – Reverse Voltage ( V )
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
1000
V RRM =600V
R thJA =100K/W
100
t p /T=0.5
t p /T=0.2
t p /T=0.1
t p /T=0.02
70
°
C
T amb =25°C
45
°
C
10
t p /T=0.01
Single pulse
50
°
C
1
100°C
10 –5
10 –4
10 –3
10 –2
10 –1
10 0
10 1
10 0
10 1
I FRM – Repetitive Peak
Forward Current ( A )
94 9561
t p – Pulse Length ( s )
Figure 7. Thermal Response
Package Dimensions in mm
3.6 max.
94 9538
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86048
Rev. 5, 07-Jan-03
www.vishay.com
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BYW32 to BYW36
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
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Document Number 86048
Rev. 5, 07-Jan-03
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