54ABT245.pdf

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July 1998
54ABT245
Octal Bidirectional Transceiver with TRI-STATE ®
Outputs
General Description
The ’ABT245 contains eight non-inverting bidirectional buff-
ers with TRI-STATE outputs and is intended for bus-oriented
applications. Current sinking capability i s 4 8 mA on both the
A and B ports. The Transmit/Receive (T/R) input determines
the direction of data flow through the bidirectional trans-
ceiver. Transmit (active HIGH) enables data from A ports to B
ports; Receive (active LOW) enables data from B ports to A
ports. The Output Enable input, when HIGH, disables both A
and B ports by placing them in a High Z condition.
n Guaranteed output skew
n Guaranteed multiple output switching specifications
n Output switching specified for both 50 pF and 250 pF
loads
n Guaranteed simultaneous switching, noise level and
dynamic threshold performance
n Guaranteed latchup protection
n High impedance glitch-free bus loading during entire
power up and power down cycle
n Non-destructive hot insertion capability
n Disable time is less than enable time to avoid bus
contention
n Standard Microcircuit Drawing (SMD) 5962-9214801
Features
n Bidirectional non-inverting buffers
n A and B output sink capability of 48 mA, source
capability of 24 mA
Ordering Code:
Military
Package
Package Description
Number
54ABT245J-QML
J20A
20-Lead Ceramic Dual-In-Line
54ABT245W-QML
W20A
20-Lead Cerpak
54ABT245E-QML
E20A
20-Lead Ceramic Leadless Chip Carrier, Type C
Logic Symbol
DS100204-1
TRI-STATE ® is a registered trademark of National Semiconductor Corporation.
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© 1998 National Semiconductor Corporation
DS100204
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Connection Diagrams
Pin Assignment for DIP
and Flatpak.
Pin Assignment for LCC
DS100204-3
Pin Descriptions
Pi n Names
DS100204-5
Description
O E
Output Enable Input (Active LOW)
T/R
Transmit/Receive Input
A 0 –A 7
Side A Inputs or TRI-STATE Outputs
B 0 –B 7
Side B Inputs or TRI-STATE Outputs
Truth Table
Inputs
Output
OE
T/R
L
L
Bus B Data to Bus A
L
H
Bus A Data to Bus B
H
X
High Z State
H = HIGH Voltage Level
L = LOW Voltage Level
X = Immaterial
Logic Diagram
DS100204-4
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature
in LOW State (Max)
twice the rated I OL (mA)
DC Latchup Source Current
−500 mA
Over Voltage Latchup (I/O)
10V
Recommended Operating
Conditions
Free Air Ambient Temperature
Military
−65˚C to +150˚C
Ambient Temperature under Bias
−55˚C to +125˚C
Junction Temperature under Bias
Ceramic
−55˚C to +175˚C
−55˚C to +125˚C
V CC Pin Potential to
Ground Pin
Supply Voltage
Military
−0.5V to +7.0V
+4.5V to +5.5V
Input Voltage (Note 2)
−0.5V to +7.0V
Minimum Input Edge Rate
t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 2: Either voltage limit or current limit is sufficient to protect inputs.
(
D
V/
D
Input Current (Note 2)
−30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disabled or
Power-off State
−0.5V to 5.5V
in the HIGH State
−0.5V to V CC
Current Applied to Output
DC Electrical Characteristics
Symbol
Parameter
ABT245
Conditions
Units
V CC
Min
Typ
Max
V IH
Input HIGH Voltage
2.0
V
Recognized HIGH Signal
V IL
Input LOW Voltage
0.8
V
Recognized LOW Signal
I IN = −18 mA (OE, T/R)
V CD
Input Clamp Diode Voltage
−1.2
V
Min
I OH = −3 mA (A n ,B n )
V OH
Output HIGH
Voltage
54ABT
2.5
V
Min
54ABT
2.0
V
Min
I OH = −24 mA (A n ,B n )
V OL
Output LOW
Voltage
54ABT
0.55
I OL = 48 mA (A n ,B n )
V
Min
V IN = 2.7V (OE, T/R) (Note 3)
I IH
Input HIGH Current
5
µA
Max
V IN = V CC (OE, T/R)
5
V IN = 7.0V (OE, T/R)
I BVI
Input HIGH Current Breakdown Test
7
µA
Max
V IN = 5.5V (A n ,B n )
I BVIT
Input HIGH Current Breakdown Test
(I/O)
100
µA
Max
V IN = 0.5V (OE, T/R) (Note 3)
I IL
Input LOW Current
−5
µA
Max
V IN = 0.0V (OE, T/R)
−5
I ID = 1.9 µA (OE, T/R)
All Other Pins Ground ed
V ID
Input Leakage Test
4.75
V
0.0
V OUT = 2.7V (A n ,B n ); OE = 2.0V
I IH +I OZH
Output Leakage Current
50
µA
0 − 5.5V
V OUT = 0.5V (A n ,B n ); OE = 2.0V
I IL +I OZL
Output Leakage Current
−50
µA
0 − 5.5V
V OUT = 0.0V (A n ,B n )
I OS
Output Short-Circuit Current
−100
−275
mA
Max
V OUT = V CC (A n ,B n )
I CEX
Output High Leakage Current
50
µA
Max
V OUT = 5.5V (A n ,B n );
All Others GND
I ZZ
Bus Drainage Test
100
µA
0.0
I CCH
Power Supply Current
50
µA
Max
All Outputs HIGH
I CCL
Power Supply Current
30
mA
Max
All Outputs LOW
OE = V CC , T/R = GND or V CC ;
All Other GND or V CC
I CCZ
Power Supply Current
50
µA
Max
I CCT
Additional
Outputs Enabled
2.5
mA
V I = V CC − 2.1V
I CC /Input
Outputs TRI-STATE
2.5
mA
Max
OE, T/R V I = V CC − 2.1V
Outputs TRI-STATE
50
µA
Data Input V I = V CC − 2.1V
All Others at V CC or GND.
3
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DC Electrical Characteristics (Continued)
Symbol
Parameter
ABT245
Conditions
Units
V CC
Min
Typ
Max
I CCD
Dynamic I CC
No Load
0.1
mA/
MHz
Outputs Open
OE = GND, T/R = GND or V CC
One Bit Toggling, 50% Duty Cycle
(Note 4)
(Note 3)
Max
Note 3: Guaranteed but not tested.
Note 4: For 8 bits toggling, I CCD < 0.8 mA/MHz.
DC Electrical Characteristics
Conditions
C L = 50 pF,
R L = 500
Symbol
Parameter
Min
Max
Units
V CC
W
T A = 25˚C (Note 5)
V OLP
Quiet Output Maximum Dynamic V OL
1.1
V
5.0
T A = 25˚C(Note 5)
V OLV
Quiet Output Minimum Dynamic V OL
-0.45
V
5.0
Note 5: Max number of outputs defined as (n).n−1data inputs are driven 0V to 3V. One output at LOW.
AC Electrical Characteristics
Symbol
Parameter
54ABT
Units
T A = −55˚C to +125˚C
V CC = 4.5V–5.5V
C L = 50 pF
Min
Max
t PLH
Propagation Delay
1.0
4.8
ns
t PHL
Data to Outputs
1.0
4.8
t PZH
Output Enable
1.0
6.7
ns
t PZL
Time
2.0
7.5
t PHZ
Output Disable
1.7
7.4
ns
t PLZ
Time
1.7
6.5
Capacitance
Symbol
Parameter
Typ
Units
Conditions
T A = 25˚C
V CC = 0V (OE , T/R)
C IN
Input Capacitance
5.0
pF
V CC = 5.0V (A n ,B n )
C I/O (Note 6)
I/O Capacitance
11.0
pF
Note 6: C I/O is measured at frequency f = 1 MHz, per MIL-STD-883B, Method 3012.
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Capacitance (Continued)
t PLH vs Temperature (T A )
C L = 50 pF, 1 Output Switching
t PHL vs Temperature (T A )
C L = 50 pF, 1 Output Switching
DS100204-14
DS100204-15
t PLH vs Load Capacitance
1 Output Switching, T A = 25˚C
t PHL vs Load Capacitance
1 Output Switching, T A = 25˚C
DS100204-16
DS100204-17
Dashed lines represent design characteristics; for specified guarantees, refer to AC Characteristics Table.
t PLH vs Load Capacitance
8 Outputs Switching, T A = −40˚C to +85˚C
t PHL vs Load Capacitance
8 Outputs Switching, T A = 25˚C
DS100204-18
DS100204-19
5
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