irf840f.pdf

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IRF840/FI
IRF841/FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
V DSS
R DS(on)
I D
IRF840
IRF840FI
500 V
500 V
<0.85
W
8A
4.5 A
<0.85
W
IRF841
IRF841FI
450 V
450 V
<0.85
W
8A
4.5 A
<0.85
W
TYPICAL R DS(on) = 0.74
W
n
AVALANCHE RUGGED TECHNOLOGY
n
100% AVALANCHE TESTED
3
3
n
2
2
REPETITIVE AVALANCHE DATA AT 100 o C
1
1
n
APPLICATIONS
n
TO-220
ISOWATT220
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
n
CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
n
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
IRF
840
841
840FI
841FI
V DS
Drain-source Voltage (V GS = 0)
500
450
500
450
V
V DGR
Drain- gate Voltage (R GS =20k
W
)
500
450
500
450
V
V GS
Gate-source Voltage
±
20
V
Drain Current (cont.) at T c =25 o C
I D
8
8
4.5
4. 5
A
o C
I D
Drain Current (cont.) at T c = 100
5.1
5.1
2.8
2.8
A
I DM (
•
)
Drain Current (pulsed)
32
32
32
32
A
Total Dissipation at T c =25 o C
P tot
125
40
W
W/ o C
Derating Factor
1
0.32
V ISO
Insulation Withstand Voltage (DC)
'
2000
o
T st g
Storage Temperature
-65 to 150
C
o C
T j
Max. Operating Junction Temperature
150
(
•
) Pulse width limited by safe operating area
May 1993
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IRF840/FI - IRF841/FI
THERMAL DATA
TO-220
ISOWATT220
o C/W
R thj-case
Thermal
Resistance
Junction-case
Max
1
3.12
o
R thj-amb
R th c-s
T l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
C/W
o C/W
o C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max
Value
Unit
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max,
8
A
d
<1%)
E AS
Single Pulse Avalanche Energy
(starting T j =25 o C, I D =I AR ,V DD =25V)
510
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max,
13
mJ
d
<1%)
I AR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
5.1
A
o C, pulse width limited by T j max,
d
<1%)
ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V (BR)DSS
Drain-source
Breakdown Voltage
I D =250
A GS =0
for IRF840/840FI
for IRF841/841FI
m
500
450
V
V
I DSS
Zero Gate Voltage
Drain Current (V GS =0)
V DS =MaxRating
V DS = Max Rating x 0.8
250
1000
m
A
T c =125 o C
m
A
I GSS
Gate-body Leakage
Current (V DS =0)
V GS =
±
20 V
±
100
nA
ON (
*
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V GS(th)
Gate Threshold Voltage V DS =V GS
I D =250
m
A
2
3
4
V
R DS(on)
Static Drain-source On
Resistance
V GS =10V
I D =4.4A
0.74
0.85
W
I D(on)
On State Drain Current
V DS >I D(on) xR DS(on)max
V GS =10V
8
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g fs (
*
)
r rd
Transconductance
V DS >I D(on) xR DS(on)max
I D =4.4A
4.9
6
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS =25V
f=1MHz
V GS = 0
1100
190
80
1500
240
110
pF
pF
pF
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IRF840/FI - IRF841/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
t r
t d(off)
t f
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD =200V
I D =4A
40
35
80
20
50
43
100
25
ns
ns
ns
ns
R i =4.7
W
(see test circuit)
Q g
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I D =8A V GS =10V
V DD = Max Rating x 0.8
(see test circuit)
75
9
39
95
nC
nC
nC
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I SD
I SD M (
Source-drain Current
Source-drain Current
(pulsed)
8
32
A
A
•
)
V SD (
*
)
Forward On Voltage
I SD =8A
V GS =0
2
V
t rr
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 8 A
di/dt = 100 A/
m
s
700
ns
o C
V DD = 100 V
T j = 150
Q rr
12
m
C
( * ) Pulsed: Pulse duration = 300 m s, duty cycle 1.5 %
( • ) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
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IRF840/FI - IRF841/FI
Thermal Impedance for TO-220
Thermal Impedance for ISOWATT220
Derating Curve for TO-220
Derating Curve for ISOWATT220
Output Characteristics
Output Characteristics
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IRF840/FI - IRF841/FI
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-source Voltage
Capacitance Variations
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