2sd1650.pdf

SD1650

RF & MICROWAVE TRANSISTORS

CELLULAR BASE STATION APPLICATIONS

. REFRACTORY/GOLD METALLIZATION

. DOUBLE STEP INPUT/OUTPUT MATCH

. 850-960 MHz CLASS AB LINEAR

. COMMON EMITTER

. P OUT = 60 W MIN. WITH 7 dB MIN GAIN

.400 6LFL (M169)

epoxy sealed

ORDER CODE

SD1650

BRANDING

SCELL500

PIN CONNECTION

DESCRIPTION

Designed for 900 MHz cellular radio base station

applications, the SD1650 exhibits high collector

efficiency with excellent thermal characteristics.

Double-section internal input/output matching re-

sult in terminal impedance levels easily handled

by the circuit designer.

1. Collector

3. Emitter

2. Base

25 ° C)

ABSOLUTE MAXIMUM RATINGS (T case

Symbol

Parameter

Value

Unit

V CBO

Collector-Base Voltage

V CEO

Collector-Emitter Voltage

V EBO

Emitter-Base Voltage

4.0

I C

Device Current

P DISS

Power Dissipation (+25

175

° C

T J

Junction Temperature

+200

° C

T STG

Storage Temperature

65 to +150

THERMAL DATA

R TH(j-c)

Junction-Case Thermal Resistance

1.5

C/W

*Applies only to rated RF amplifier operation

1/5

August 1992

SD1650

25 ° C)

ELECTRICAL SPECIFICATIONS (T case

STATIC

Valu e

Symbol

Test Conditions

Unit

Min.

Typ.

Max.

BV CBO

I C

50mA

—

BV EBO

I E

20mA

3.0

—

BV CES

I C

100mA

—

BV CEO

I C

100mA

—

I CEO

V CE

24V

—

h FE

V CE

I C

—

200

—

DYNAMIC

Valu e

Symbol

Test Conditions

Unit

Min.

Typ.

Max.

P OUT

900 MHz

P IN

12 W

I CQ

300 mA

—

h c

900 MHz

P IN

12 W

I CQ

300 mA

—

G P

900 MHz

P IN

12 W

I CQ

300 mA

—

VSWR

900 MHz

P IN

12 W

3:1

—

2/5

SD1650

TYPICAL PERFORMANCE

BROADBAND POWER OUTPUT

vs POWER INPUT

BROADBAND POWER OUTPUT

vs FREQUENCY

vs POWER INPUT

vs FREQUENCY

100

850 MHz

900 MHz

960 MHz

P IN

12 Watts

I CQ

300 mA

0123456789 0 1 2 3

825

850

875

900

925

950

975

1000

POWER INPUT (WATTS)

FREQUENCY (MHz)

BROADBAND EFFICIENCY

vs FREQUENCY

BROADBAND POWER GAIN

vs FREQUENCY

9.5

8.5

P OUT

60 Watts

P OUT

60 Watts

I CQ

300 mA

I CQ

300 mA

7.5

825

850

875

900

925

950

975

1000

825

850

875

900

925

950

975

1000

FREQUENCY (MHz)

3/5

SD1650

IMPEDANCE DATA

TYPICAL INPUT

IMPEDANCE

Z IN

FREQ.

Z IN (

)

Z CL (

)

850 MHz

2.4 + j 5.2

4.0

j1.3

870 MHz

2.6 + j 5.4

3.9

j2.3

900 MHz

3.2 + j 6.3

3.6

j2.6

TYPICAL COLLECTOR

LOAD IMPEDANCE

930 MHz

4.1 + j 6.0

3.4

j2.4

Z CL

960 MHz

4.7 + j 5.6

3.0

j3.0

TEST CIRCUIT

C1,C2

220 pF Chip Capacitor ATC Size B

L1,L2

5 Turn 1/4” Dia. 16 AWG Coil

10 Microfarad Electrolytic Capacitor

SD1438-02 or Equiv.

C4,C5

220 pF Chip Capacitor ATC Size B

Potentiometer

C6,C7

1 - 4 pF Johanson Variable Capacitor

100

1/4 Watt Resistor

D1,D2

1N3064 Diode or Equiv

10.2 H

.025in.

4/5

SD1650

PACKAGE MECHANICAL DATA

Ref. Dwg. No.: 12-0169

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No

license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned

in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express

written approval of SGS-THOMSON Microelectonics.

{

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A

5/5

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