40107.pdf

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DUAL 2-INPUT NAND BUFFER/DRIVER
HCC/HCF40107B
DUAL 2-INPUT NAND BUFFER/DRIVER
. 32 TIMES STANDARD B-SERIES OUTPUT
CURRENT DRIVE SINKING CAPABILITY
– 136mA TYP. @ V DD = 10V, V DS =1V
. INPUT CURRENT OF 100nA AT 18V AND 25 ° C
. 100% TESTED FOR QUIESCENT CURRENT
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
. MEETS ALL REQUIREMENTS OF JEDEC TEN-
. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
°
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES
HCC40107BF HCF40107BM1
HCF40107BEY HCF40107BC1
PIN CONNECTIONS
DESCRIPTION
The HCC40107B (extended temperature range)
and HCF40107B (intermediate temperature range)
are monolithic integrated circuits, available in 14-
lead dual in-line ceramic package 8-lead minidip
plastic package and 8-lead plastic micropackage.
The HCC/HCF40107B is a dual 2-input NAND buf-
fer/driver containing two independent 2-input NAND
buffers with open-drain single n-channel transistor
outputs. This device features a wired-OR capability
and high output sink current capability (136mA typ.
at V DD = 10V, V DS = 1V).
September 1988
1/14
. QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
. 5V, 10V, AND 15V PARAMETRIC RATINGS
FOR HCC DEVICE
TATIVE STANDARD N
21706062.002.png
HCC/HCF40107B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD *
Supply Voltage : HCC types
HCF types
– 0.5 to + 20
– 0.5 to + 18
V
V i
Input Voltage
– 0.5 to VDD + 0.5
V
I I
DC Input Current (any one input)
±
10
mA
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T op = full package-temperature Range
200
P tot
mW
100
T op
Operating Temperature : HCC types
HCF types
– 55 to + 125
–40to+85
°
C
T stg
Storage Temperature
– 65 to + 150
°
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltages values are referred to V SS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage : HCC Types
HCF Types
3to18
3to15
V
V
V I
Input Voltage
0 to V DD
V
T op
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
–40to+85
C
°
C
2/14
°
21706062.003.png
HCC/HCF40107B
SCHEMATIC DIAGRAM AND TRUTH TABLE
A
B
C
0
0
1*
Z #
1
0
1*
Z #
0
1
1*
Z #
1
1
0
* Requires external and pull-up resis-
tor (R L )toV DD .
# Without pull-up resistor (3-state).
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V I
V O
|I O |V DD
T Low *
25
C
T Hi g h *
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I L
Quiescent
Current
0/ 5
5
1
0.02
1
30
HCC
Types
0/10
10
2
0.02
2
60
0/15
15
4
0.02
4
120
0/20
20
20
0.04 20
600
m
A
0/ 5
5
4
0.02
4
30
HCF
Types
0/10
10
8
0.02
8
60
0/15
15
16
0.02 16
120
V IH ** Input High
Voltage
0.5/4.5 < 1
5
3.5
3.5
3.5
1/9
< 1 10
7
7
7
V
1.5/13.5 < 1 15
11
11
11
V IL **
Input Low
Voltage
4.5
< 1
5
1.5
1.5
1.5
9
< 1 10
3
3
3
V
13.5
< 1 15
4
4
4
* Low =–55
C for HCC device ; – 40
C for HCF device.
C for HCF device.
The Noise Margin, full package temperature range, R L to V DD =10k
C for HCC device ; + 85
°
W
: 1V min with V DD = 5V, 2V min with V DD = 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, R L = 10k
W
to V DD .
*** Forced output disabled.
3/14
°
°
°
* High = + 125
°
21706062.004.png
HCC/HCF40107B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions
Value
Symbol
Parameter
V I
V O
|I O |V DD
T Low *
25
°
C
T Hig h *
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I OL
Output
Sink
Current
5
0.4
5
21
16
32
12
HCC
Types
5
1
5
44
30
68
25
10
0.5
10
49
37
74
28
10
1
10
89
68
136
51
15
0.5
15
66
50
100
38
mA
5
0.4
5
17
13.6 32
12
HCF
Types
5
1
5
35.7
25.5 68
22
10
0.5
10 39.1
31.4 74
27
10
1
10 72.2
57.8 136
51
15
0.5
15 53.5
42.5 100
37
I OH
Output Drive
Current
No Internal Pull-up Device
mA
I IH ,I IL Input
Leakage
Current
HCC
Types
0/18
18
±
0.1
±
10 –5
0.1
±
1
m
Any Input
HCF
Types
10 –5
0/15
15
±
0.3
±
±
0.3
±
1
I OH ,I OL
***
3-State
Output
Leakage
Current
HCC
Types
0/18
18
18
2
±
10 –4
2
20
m
A
HCF
Types
0/15
15
15
2
±
10 –4
2
20
C I
Input Capacitance
Any Input
5
7.5
pF
C O
Output
Capacitance
Any Output
30
pF
*T Low =–55
°
C for HCC device ; – 40
C for HCF device.
C for HCF device.
The Noise Margin, full package temperature range, R L to V DD =10k
°
C for HCC device ; + 85
°
W
: 1V min with V DD = 5V, 2V min with V DD = 10V, 2.5V min with VDD = 15V.
** Measured with external pull-up resistor, R L = 10k
W
to V DD .
*** Forced output disabled.
4/14
±
A
°
*T High = + 125
21706062.005.png
HCC/HCF40107B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25
°
C, C L = 50pF, typical temperature
coefficient for all V DD values is 0.3%/
°
C, all input rise and fall time = 20ns)
Symbol
Parameter
Test Conditions
Value
Unit
V DD (V) Min. Typ. Max.
t PHL ,
t PL H
Propagation Delay Time
High to Low
R L * = 120
W
5
100
200
10
45
90
ns
15
30
60
Low to High
R L * = 120
W
5
100
200
10
60
120
ns
15
50
100
t THL ,
t TL H
Transition Time
High to Low
R L * = 120
W
5
50
100
10
20
40
ns
15
10
20
Low to High
R L * = 120
W
5
50
100
10
35
70
ns
15
25
50
*R L is external pull-up resistor to V DD .
Output Low (sink) Current Characteristics.
Typical Propagation Delay Time vs. Load Capacit-
ance.
5/14
21706062.001.png

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