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CNY64/ CNY65/ CNY66
Optocoupler with Phototransistor Output
Description
The CNY64/ 65/ 66 consist of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in
a 4-lead plastic package.
The single components are mounted in opposite
oneanother, providing a distance between input and
output for highest safety requirements of > 3 mm.
95 10536
95 10535
95 10537
Application
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
For application class I - IV at mains voltage
3
300 V
For application class I - IV at mains voltage
3
600 V
For application class I - III at mains voltage
3
1000 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, computer peripheral
interface, microprocessor system interface, line
receiver .
These couplers perform safety functions according to the following equipment standards:
VDE 0884/08.87
Optocoupler providing protective separation
VDE 0860/lEC 65
Safety for mains-operated electronic and related
household apparatus
VDE 0804
Telecommunication apparatus and data processing
VDE 0700/IEC 335
Household equipment
VDE 0805/IEC 950/EN 60950
Office machines (applied for reinforced isolation for
mains voltage
VDE 0160
Electronic equipment for electrical power installation
3
400 V RMS )
VDE 0750/IEC 601
Medical equipment
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
1 (12)
296746576.017.png 296746576.018.png 296746576.019.png 296746576.020.png 296746576.001.png
CNY64/ CNY65/ CNY66
Approvals:
BSI : BS 415, BS 7002
FIMKO (SETI): EN 950
U nderwriters L aboratory (UL) 1577
recognized-file No. E-76222
VDE 0884 Certificate number 76814
General features:
Isolation materials according to UL94–VO
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
Climatic classification 55/085/21 (IEC 68 part 1)
VDE 0884 related features:
Special construction:
Therefore extra low coupling capacity
typical 0.3 pF, high C ommon M ode R ejection
Rated impulse voltage (transient overvoltage)
V I0TM = 8 kV peak
Low temperature coefficient of CTR
C urrent T ransfer R atio (CTR) = 50 to 300%
Isolation test voltage (partial discharge test voltage)
V pd = 2.8 kV peak
CNY64/65 also available in CTR groups A and B
Rated insulation voltage (RMS includes DC)
V IOWM = 1000 V RMS (1450 V peak)
Pin Connection
A (+)
C
Rated recurring peak voltage (repetitive)
V IORM = 1000 V RMS
Creepage current resistance according to
VDE 0303/IEC 112
C omparative T racking I ndex: (CTI) = 200
Thickness through insulation > 3 mm
C (–)
E
Absolute Maximum Ratings
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Reverse voltage
V R
5
V
Forward current
I F
75
mA
Forward surge current
t p
3
10 s
I FSM
1.5
A
Power dissipation
T amb
3
25
°
C
P tot
120
mW
Junction temperature
T j
100
C
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
V CEO
32
V
Emitter collector voltage
V ECO
7
V
Collector current
I C
50
mA
Collector peak current
t p /T = 0.5, t p
3
10 ms
I CM
100
mA
Power dissipation
T amb
3
25
°
C
P tot
130
mW
Junction temperature
T j
100
C
2 (12)
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
Features
°
°
296746576.002.png 296746576.003.png 296746576.004.png 296746576.005.png
CNY64/ CNY65/ CNY66
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
AC isolation test voltage (RMS)
V IO
8.2
kV
Total power dissipation
T amb
3
25
C
P tot
250
mW
Ambient temperature range
T amb
–55 to +85
°
C
Storage temperature range
T stg
–55 to +100
°
C
Soldering temperature
2 mm from case, t
3
10 s
T sd
260
°
C
Maximum Safety Ratings 1) (according to VDE 0884)
Input (Emitter)
Parameters
Test Conditions
Symbol
Value
Unit
Forward current
I si
120
mA
Output (Detector)
Parameters
Test Conditions
Symbol
Value
Unit
Power dissipation
T amb
3
25
C
P si
250
mW
Coupler
Parameters
Test Conditions
Symbol
Value
Unit
Rated impulse voltage
V IOTM
8
kV
Safety temperature
T si
180
°
C
1)
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Derating Diagram
250
225
P si (mW)
200
175
150
125
100
75
I si (mA)
50
25
0
0
25 50 75 100 125 150 175 200
T amb ( °C )
95 10922
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
3 (12)
°
°
296746576.006.png 296746576.007.png 296746576.008.png 296746576.009.png
CNY64/ CNY65/ CNY66
Electrical Characteristics
C
Input (Emitter)
Parameters
°
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
I F = 50 mA
V F
1.25
1.6
V
Junction capacitance V R = 0, f = 1 MHz
C j
50
pF
Output (Detector)
Parameters
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
Collector emitter
voltage
I C = 1 mA
V CEO
32
V
Emitter collector
voltage
I E = 100 A
V ECO
7
V
Collector emitter
cut-off current
V CE = 20 V, I f = 0
I CEO
200
nA
Coupler
Parameters
Test Conditions
Type
Symbol
Min.
Typ.
Max.
Unit
AC isolation test
voltage (RMS)
f = 50 Hz, t = 1 s
V IO
8.2
kV
Collector/emitter
saturation voltage
I F = 10 mA,
I C = 1 mA
V CEsat
0.3
V
Cut-off frequency
V CE = 5 V,
I F = 10 mA,
R L = 100
f c
110
kHz
Coupling capacitance f = 1 MHz
C k
0.3
pF
CNY64
CNY65
CNY66
0.5
1
3
V CE = 5 V,
V CE 5 V,
I F = 10 mA
I C /I F
CNY64A
CNY65A
CTR
0.63
1.25
CNY64B
CNY65B
1
2
4 (12)
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
T amb = 25
296746576.010.png 296746576.011.png 296746576.012.png
CNY64/ CNY65/ CNY66
Switching Characteristics (Typical Values)
V S = 5 V
Type
R L = 100 (see figure 1)
R L = 1 k (see figure 2)
t d [s] t r [s] t on [s] t s [s] t f [s] t off [s] I C [mA] t on [s] t off [s] I F [mA]
CNY64, 65, 66
2.6
2.4
5.0
0.3
2.7
3.0
5
25
42.5
10
I F
IF
+ 5 V
0
IC = 5 mA;
Adjusted through
input amplitude
R G
= 50
t p
= 0.01
T
t p
= 50 ms
Channel I
Oscilloscope
Channel II
R L 1 M
C L 20 pF
50
100
95 10900
Figure 1. Test circuit, non-saturated operation
I F
I F = 10 mA
+ 5 V
0
I C
R G
= 50
t p
= 0.01
T
t p
= 50 s
Channel I
Oscilloscope
Channel II
R L 1 M
C L 20 pF
50
1 k
95 10843
Figure 2. Test circuit, saturated operation
TELEFUNKEN Semiconductors
Rev. A2, 12-Dec-97
5 (12)
Type
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