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IRF740A.p65
PD- 92004
SMPS MOSFET
IRF740A
HEXFET ® Power MOSFET
Applications
V DSS Rds(on) max
I D
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
400V
0.55
W
10A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN 1001)
TO-220AB
G
D
S
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
10
I D @ T C = 100°C
Continuous Drain Current, V GS @ 10V
6.3
A
I DM
Pulsed Drain Current
40
P D @T C = 25°C
Power Dissipation
125
W
Linear Derating Factor
1.0
W/°C
V GS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
5.9
V/ns
T J
Operating Junction and
-55 to + 150
T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Typical SMPS Topologies:
l Single transistor Flyback Xfmr. Reset
l Single Transistor Forward Xfmr. Reset
( Both for US Line Input only )
Notes
through
are on page 8
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IRF740A
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage 400 ––– ––– V V GS = 0V, I D = 250µA
D V (BR)DSS / D T J Breakdown Voltage Temp. Coefficient ––– 0.48 ––– V/°C Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.55
W
V GS = 10V, I D = 6.0A
V GS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V
V DS = V GS , I D = 250µA
I DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V DS = 400V, V GS = 0V
––– ––– 250
V DS = 320V, V GS = 0V, T J = 125°C
I GSS
Gate-to-Source Forward Leakage
––– ––– 100
nA
V GS = 30V
Gate-to-Source Reverse Leakage
––– ––– -100
V GS = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
g fs
Forward Transconductance
4.9 ––– –––
S
V DS = 50V, I D = 6.0A
Q g
Total Gate Charge
––– ––– 36 I D = 10A
Q gs
Gate-to-Source Charge
––– ––– 9.9
nC V DS = 320V
Q gd
Gate-to-Drain ("Miller") Charge
––– ––– 16
V GS = 10V, See Fig. 6 and 13
t d(on)
Turn-On Delay Time
–––
10 –––
V DD = 200V
t r
Rise Time
–––
35 –––
ns
I D = 10A
t d(off)
Turn-Off Delay Time
–––
24 –––
R G = 10
W
t f
Fall Time
–––
22 –––
R D = 19.5
W
,See Fig. 10
C iss
Input Capacitance
––– 1030 –––
V GS = 0V
C oss
Output Capacitance
––– 170 –––
V DS = 25V
C rss
Reverse Transfer Capacitance
––– 7.7 –––
pF ƒ = 1.0MHz, See Fig. 5
C oss
Output Capacitance
––– 1490 –––
V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz
C oss
Output Capacitance
–––
52 –––
V GS = 0V, V DS = 320V, ƒ = 1.0MHz
C oss eff.
Effective Output Capacitance
–––
61 –––
V GS = 0V, V DS = 0V to 320V
Avalanche Characteristics
Parameter
Typ.
Max.
Units
E AS
Single Pulse Avalanche Energy
–––
630
mJ
I AR
Avalanche Current
–––
10
A
E AR
Repetitive Avalanche Energy
–––
12.5
mJ
Thermal Resistance
Parameter
Typ.
Max.
Units
R q JC
Junction-to-Case
–––
1.0
R q CS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
R q JA
Junction-to-Ambient
–––
62
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
MOSFET symbol
D
––– –––
10
(Body Diode)
showing the
A
I SM
Pulsed Source Current
integral reverse
G
––– –––
40
(Body Diode)
p-n junction diode.
S
V SD
Diode Forward Voltage
––– ––– 2.0
V
T J = 25°C, I S = 10A, V GS = 0V
t rr
Reverse Recovery Time
––– 240 360
ns T J = 25°C, I F = 10A
Q rr
Reverse RecoveryCharge
––– 1.9 2.9
µC di/dt = 100A/µs
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
2
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IRF740A
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
10
BOTTOM
BOTTOM
10
1
1
0.1
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
°
20µs PULSE WIDTH
T = 150 C
°
0.1
0.01
0.1
1
10
100
0.1
1
10
100
V , Drain-to-Source Voltage (V)
DS
V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I =
10A
2.5
10
T = 150 C
J
°
2.0
1.5
1
1.0
T = 25 C
J
°
0.5
V = 50V
20µs PULSE WIDTH
V =
10V
GS
0.0
0.1
4.0
5.0
6.0
7.0
8.0
9.0
10.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
°
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
J
D
DS
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IRF740A
20
I =
10A
D
100000
V GS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V = 320V
DS
V = 200V
DS
16
V = 80V
DS
10000
1000
Ciss
12
100
Coss
8
10
Crss
4
1
FOR TEST CIRCUIT
SEE FIGURE
13
1
10
100
1000
0
0
10
20
30
40
V DS , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10us
10
T = 150 C
J
°
10
100us
T = 25 C
J
°
1
1ms
T
C
= 25 C
°
T
= 150 C
°
J
V = 0 V
GS
Single Pulse
10ms
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
100
1000
V ,Source-to-Drain Voltage (V)
V , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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SD
DS
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IRF740A
10.0
V DS
R D
V GS
D.U.T.
8.0
R G
+
- V DD
6.0
10V
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
V DS
90%
0.0
25
50
75
100
125
150
T , Case Temperature ( C)
°
10%
V GS
Fig 9. Maximum Drain Current Vs.
Case Temperature
t d(on) t r
t d(off) t f
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
P
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
1
0.01
t
2
Notes:
1. Duty factor D = t / t
2. Peak T = P
1
2
J
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
C
t
1
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