2SB817P.PDF

Ordering number : ENN6572

2SB817P / 2SD1047P

2SB817P : PNP Epitaxial Planar Silicon Transistor

2SD1047P : NPN Triple Diffused Planar Silicon Transistor

2SB817P / 2SD1047P

140V / 12A, AF80W Output Applications

Features

• Capable of being mounted easily because of one-

point fixing type plastic molded package (Inter-

changeable with TO-3).

• Wide ASO because of built-in ballast resistance.

• Goode dependence of f T on current and good HF

characteristic.

Package Dimensions

unit : mm

2022A

[2SB817P / 2SD1047P]

15.6

3.2

4.8

14.0

2.0

1.6

2.0

0.6

1.0

1 2 3

1 : Base

2 : Collector

3 : Emitter

0.6

Specifications

( ) : 2SB817P

Absolute Maximum Ratings at Ta=25

5.45

SANYO : TO-3PB

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

V CBO

)160

Collector-to-Emitter Voltage

V CEO

( - )140

Emitter-to-Base Voltage

V EBO

( - )6

Collector Current

I C

(

)12

Collector Current (Pulse)

I CP

( - )15

Collector Dissipation

P C

Tc=25 ° C

120

Junction Temperature

150

Storage Temperature

Tstg

- 40 to +150

° C

Electrical Characteristics at Ta=25

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

I CBO

V CB =(--)80V, I E =0

(--)0.1

Emitter Cutoff Current

I EBO

V EB =(--)4V, I C =0

(--)0.1 mA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-3036

No.6572-1/4

(

2SB817P / 2SD1047P

Continued from preceding page.

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

DC Current Gain

h FE 1

V CE =(--)5V, I C =(--)1A

60*

200*

h FE 2

V CE =(--)5V, I C =(--)6A

Gain-Bandwidth Product

f T

V CE =(--)5V, I C =(--)1A

MHz

Output Capacitance

Cob

V CB =(--)10V, f=1MHz

(300)210

Base-to-Emitter Saturation Voltage

V BE

V CE =(--)5V, I C =(--)1A

1.5

Collector-to-Emitter Saturation Voltage

V CE (sat)

I C =(--)5A, I B =(--)0.5A

(1.1)0.6

2.5

Collector-to-Base Breakdown Voltage

V (BR)CBO I C =(--)5mA, I E =0

(--)160

Collector-to-Emitter Breakdown Voltage

V (BR)CEO

I C =(--)5mA, R BE = ¥

(--)140

I C =(--)50mA, R BE = ¥

(--)140

Emitter-to-Base Breakdown Voltage

V (BR)EBO I E =(--)5mA, I C =0

(--)6

Turn-ON Time

t on

See specified test circuit.

(0.25)0.26

m s

Fall Time

t f

See specified test circuit.

(0.53)0.68

m s

Storage Time

t stg

See specified test circuit.

(1.61)6.88

m s

* : The 2SB817P / 2SD1047P are classified by 1A h FE as follows

Rank

h FE

60 to 120

100 to 200

Swicthing Time Test Circuit

I B1

PW=20

I B2

1 ½

OUTPUT

INPUT

200V R

20 ½

51 ½

V CC =20V

1 µ F

V BE = --2V

10I B1 = --10I B2 =I C =1A

For PNP, the polarity is reversed.

--10

I C -- V CE

2SB817P

2SD1047P

-- 9

-- 8

-- 7

-- 6

--80m A

-- 5

-- 4

4 0mA

--40mA

-- 3

--20mA

20mA

-- 2

-- 1

I B =0

--5

--10

--15

--20

--25

--30

--35

--40

Collector-to-Emitter Voltage, V CE -- V IT02167

Collector-to-Emitter Voltage, V CE -- V

IT02168

I C -- V BE

-- 7

2SB817P

V CE = --5V

2SD1047P

V CE =5V

-- 6

-- 5

-- 4

-- 3

-- 2

-- 1

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

--1.4

--1.6

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Base-to-Emitter Voltage, V BE -- V

IT02169

Base-to-Emitter Voltage, V BE -- V

IT02170

No.6572-2/4

2SB817P / 2SD1047P

f T -- I C

2SB817P

V CE = --5V

2SD1047P

V CE =5V

1.0

--0.1

23 57

--1.0

23 57

--10

0.1

23 57

1.0

23 57

Collector Current, I C -- A

IT02171

Collector Current, I C -- A

IT02172

h FE -- I C

1000

2SB817P

V CE = --5V

2SD1047P

V CE =5V

100

--0.1

23 57 --1.0

23 57 --10

0.1

23 57 1.0

23 57 10

Collector Current, I C -- A

IT02173

Collector Current, I C -- A

IT02174

2SB817P

f=1MHz

2SD1047P

f=1MHz

1000

100

23 57

--1.0

--10

--100

1.0

100

Collector-to-Base Voltage, V CB -- V

IT02175

Collector-to-Base Voltage, V CB -- V

IT02176

V CE (sat) -- I C

2SB817P

I C / I B =10

2SD1047P

I C / I B =10

--10

--1.0

1.0

--0.1

0.1

--0.1

23 57

--1.0

23 57

--10

0.1

23 57

1.0

23 57

Collector Current, I C -- A

IT02177

Collector Current, I C -- A

IT02178

No.6572-3/4

Cob -- V CB

2SB817P / 2SD1047P

V BE (sat) -- I C

2SB817P

I C / I B =10

2SD1047P

I C / I B =10

--10

--1.0

1.0

--0.1

23 57

Collector Current, I C -- A

--1.0

--10

0.1

23 57

Collector Current, I C -- A

1.0

IT02179

IT02180

A S O

P C -- Tc

140

2SB817P / 2SD1047P

I C I CP

120

100

1.0

2SB817P / 2SD1047P

(For PNP minus sign is omitted)

0.1

100

120

140

160

Collector-to-Emitter Voltage, V CE -- V

IT02181

Case Tamperature, Tc --

IT02182

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2000. Specifications and information herein are subject

to change without notice.

No.6572-4/4

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